Resistive switching in HfO 2 probed by a metal-insulator- semiconductor bipolar transistor

E. Yalon; A. Gavrilov; S. Cohen; D. Mistele; B. Meyler; J. Salzman; D. Ritter

doi:10.1109/LED.2011.2171317

Resistive switching in HfO ₂ probed by a metal-insulator- semiconductor bipolar transistor

E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, D. Ritter

Technion - Israel Institute of Technology

Research output: Contribution to journal › Review article › peer-review

Abstract

Resistive switching in thin HfO ₂ films is studied using a metal-insulator-semiconductor bipolar transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

Original language	English
Article number	6069527
Pages (from-to)	11-13
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	1
DOIs	https://doi.org/10.1109/LED.2011.2171317
State	Published - Jan 2012

Keywords

Resistive random access memory
resistive switching (RS)
tunneling emitter bipolar transistor

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2011.2171317

Cite this

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title = "Resistive switching in HfO 2 probed by a metal-insulator- semiconductor bipolar transistor",

abstract = "Resistive switching in thin HfO 2 films is studied using a metal-insulator-semiconductor bipolar transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.",

keywords = "Resistive random access memory, resistive switching (RS), tunneling emitter bipolar transistor",

author = "E. Yalon and A. Gavrilov and S. Cohen and D. Mistele and B. Meyler and J. Salzman and D. Ritter",

note = "Funding Information: Manuscript received September 23, 2011; accepted October 3, 2011. Date of publication November 3, 2011; date of current version December 23, 2011. This work was supported in part by the Technion Russell Berrie Nanotechnology Institute. The review of this letter was arranged by Editor A. Ortiz-Conde.",

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AU - Yalon, E.

AU - Gavrilov, A.

AU - Cohen, S.

AU - Mistele, D.

AU - Meyler, B.

AU - Salzman, J.

AU - Ritter, D.

N1 - Funding Information: Manuscript received September 23, 2011; accepted October 3, 2011. Date of publication November 3, 2011; date of current version December 23, 2011. This work was supported in part by the Technion Russell Berrie Nanotechnology Institute. The review of this letter was arranged by Editor A. Ortiz-Conde.

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N2 - Resistive switching in thin HfO 2 films is studied using a metal-insulator-semiconductor bipolar transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

AB - Resistive switching in thin HfO 2 films is studied using a metal-insulator-semiconductor bipolar transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

KW - Resistive random access memory

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