@inproceedings{52c93de52ddd47b7a9cc98ed8b1708cb,
title = "Resistance Drift Reset State and Read Voltage Dependencies in Phase Change Memory",
abstract = "Using Phase-change memory as artificial synapses for neuromorphic computing hardware is severely limited by resistance drift. This drift depends on the initial resistance state, and devices show non-linear I-V characteristics indicating that the PCM resistance also depends on the read voltage. Here we present an electrical characterization methodology to asses these dependencies. We measure 180 reset cycles and perform statistical analysis. Our methodology can be used to better predict drift dependencies, ultimately mitigating it.",
keywords = "Phase change memory, multi-level cells, resistance drift",
author = "Nir-Harwood, \{Rivka Galya\} and Mayan Hochler and Einav Yunger and Eilam Yalon",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 ; Conference date: 03-03-2024 Through 06-03-2024",
year = "2024",
doi = "10.1109/EDTM58488.2024.10511715",
language = "الإنجليزيّة",
series = "IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024",
booktitle = "IEEE Electron Devices Technology and Manufacturing Conference",
}