TY - GEN
T1 - Resistance Drift Reset State and Read Voltage Dependencies in Phase Change Memory
AU - Nir-Harwood, Rivka Galya
AU - Hochler, Mayan
AU - Yunger, Einav
AU - Yalon, Eilam
N1 - Publisher Copyright: © 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - Using Phase-change memory as artificial synapses for neuromorphic computing hardware is severely limited by resistance drift. This drift depends on the initial resistance state, and devices show non-linear I-V characteristics indicating that the PCM resistance also depends on the read voltage. Here we present an electrical characterization methodology to asses these dependencies. We measure 180 reset cycles and perform statistical analysis. Our methodology can be used to better predict drift dependencies, ultimately mitigating it.
AB - Using Phase-change memory as artificial synapses for neuromorphic computing hardware is severely limited by resistance drift. This drift depends on the initial resistance state, and devices show non-linear I-V characteristics indicating that the PCM resistance also depends on the read voltage. Here we present an electrical characterization methodology to asses these dependencies. We measure 180 reset cycles and perform statistical analysis. Our methodology can be used to better predict drift dependencies, ultimately mitigating it.
KW - Phase change memory
KW - multi-level cells
KW - resistance drift
UR - https://www.scopus.com/pages/publications/85193283567
U2 - 10.1109/EDTM58488.2024.10511715
DO - 10.1109/EDTM58488.2024.10511715
M3 - Conference contribution
T3 - IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
BT - IEEE Electron Devices Technology and Manufacturing Conference
T2 - 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
Y2 - 3 March 2024 through 6 March 2024
ER -