Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications

Sung Jin Yang; Mor Mordechai Dahan; Or Levit; Frank Makal; Paul Peterson; Jason Alikpala; SS Teja Nibhanupudi; Christopher J. Luth; Sanjay K. Banerjee; Myungsoo Kim; Andreas Roessler; Eilam Yalon; Deji Akinwande

doi:10.1021/acs.nanolett.2c03565

Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications

Sung Jin Yang, Mor Mordechai Dahan, Or Levit, Frank Makal, Paul Peterson, Jason Alikpala, SS Teja Nibhanupudi, Christopher J. Luth, Sanjay K. Banerjee, Myungsoo Kim, Andreas Roessler, Eilam Yalon, Deji Akinwande

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 10¹¹ and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the D-band spectrum (110 to 170 GHz). Furthermore, the S₂₁ insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.

Original language	English
Pages (from-to)	1152-1158
Number of pages	7
Journal	Nano Letters
Volume	23
Issue number	4
DOIs	https://doi.org/10.1021/acs.nanolett.2c03565
State	Published - 22 Feb 2023

Keywords

2D material
6G
D-band frequency measurement
hexagonal boron nitride
radiofrequency switch

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/acs.nanolett.2c03565

Cite this

Yang, S. J., Dahan, M. M., Levit, O., Makal, F., Peterson, P., Alikpala, J., Nibhanupudi, SS. T., Luth, C. J., Banerjee, S. K., Kim, M., Roessler, A., Yalon, E., & Akinwande, D. (2023). Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications. Nano Letters, 23(4), 1152-1158. https://doi.org/10.1021/acs.nanolett.2c03565

@article{3e48f16021734edea8974277b14bb946,

title = "Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications",

abstract = "Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 1011 and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the D-band spectrum (110 to 170 GHz). Furthermore, the S21 insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.",

keywords = "2D material, 6G, D-band frequency measurement, hexagonal boron nitride, radiofrequency switch",

author = "Yang, \{Sung Jin\} and Dahan, \{Mor Mordechai\} and Or Levit and Frank Makal and Paul Peterson and Jason Alikpala and Nibhanupudi, \{SS Teja\} and Luth, \{Christopher J.\} and Banerjee, \{Sanjay K.\} and Myungsoo Kim and Andreas Roessler and Eilam Yalon and Deji Akinwande",

note = "Publisher Copyright: {\textcopyright} 2023 American Chemical Society.",

year = "2023",

month = feb,

day = "22",

doi = "10.1021/acs.nanolett.2c03565",

language = "الإنجليزيّة",

volume = "23",

pages = "1152--1158",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications

AU - Yang, Sung Jin

AU - Dahan, Mor Mordechai

AU - Levit, Or

AU - Makal, Frank

AU - Peterson, Paul

AU - Alikpala, Jason

AU - Nibhanupudi, SS Teja

AU - Luth, Christopher J.

AU - Banerjee, Sanjay K.

AU - Kim, Myungsoo

AU - Roessler, Andreas

AU - Yalon, Eilam

AU - Akinwande, Deji

PY - 2023/2/22

Y1 - 2023/2/22

N2 - Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 1011 and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the D-band spectrum (110 to 170 GHz). Furthermore, the S21 insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.

AB - Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 1011 and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the D-band spectrum (110 to 170 GHz). Furthermore, the S21 insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.

KW - 2D material

KW - 6G

KW - D-band frequency measurement

KW - hexagonal boron nitride

KW - radiofrequency switch

UR - http://www.scopus.com/inward/record.url?scp=85146874407&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.2c03565

DO - 10.1021/acs.nanolett.2c03565

M3 - مقالة

SN - 1530-6984

VL - 23

SP - 1152

EP - 1158

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -

Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications

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Keywords

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