Recommended Methods to Study Resistive Switching Devices

Mario Lanza; H. S.Philip Wong; Eric Pop; Daniele Ielmini; Dimitri Strukov; Brian C. Regan; Luca Larcher; Marco A. Villena; J. Joshua Yang; Ludovic Goux; Attilio Belmonte; Yuchao Yang; Francesco M. Puglisi; Jinfeng Kang; Blanka Magyari-Köpe; Eilam Yalon; Anthony Kenyon; Mark Buckwell; Adnan Mehonic; Alexander Shluger; Haitong Li; Tuo Hung Hou; Boris Hudec; Deji Akinwande; Ruijing Ge; Stefano Ambrogio; Juan B. Roldan; Enrique Miranda; Jordi Suñe; Kin Leong Pey; Xing Wu; Nagarajan Raghavan; Ernest Wu; Wei D. Lu; Gabriele Navarro; Weidong Zhang; Huaqiang Wu; Runwei Li; Alexander Holleitner; Ursula Wurstbauer; Max C. Lemme; Ming Liu; Shibing Long; Qi Liu; Hangbing Lv; Andrea Padovani; Paolo Pavan; Ilia Valov; Xu Jing; Tingting Han; Kaichen Zhu; Shaochuan Chen; Fei Hui; Yuanyuan Shi

doi:10.1002/aelm.201800143

Recommended Methods to Study Resistive Switching Devices

Mario Lanza
, H. S.Philip Wong
, Eric Pop
, Daniele Ielmini
, Dimitri Strukov
, Brian C. Regan
, Luca Larcher
, Marco A. Villena
, J. Joshua Yang
, Ludovic Goux
, Attilio Belmonte
, Yuchao Yang
, Francesco M. Puglisi
, Jinfeng Kang
, Blanka Magyari-Köpe
, Eilam Yalon
, Anthony Kenyon
, Mark Buckwell
, Adnan Mehonic
, Alexander Shluger

Haitong Li, Tuo Hung Hou, Boris Hudec, Deji Akinwande, Ruijing Ge, Stefano Ambrogio, Juan B. Roldan, Enrique Miranda, Jordi Suñe, Kin Leong Pey, Xing Wu, Nagarajan Raghavan, Ernest Wu, Wei D. Lu, Gabriele Navarro, Weidong Zhang, Huaqiang Wu, Runwei Li, Alexander Holleitner, Ursula Wurstbauer, Max C. Lemme, Ming Liu, Shibing Long, Qi Liu, Hangbing Lv, Andrea Padovani, Paolo Pavan, Ilia Valov, Xu Jing, Tingting Han, Kaichen Zhu, Shaochuan Chen, Fei Hui, Yuanyuan Shi

Research output: Contribution to journal › Review article › peer-review

Abstract

Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

Original language	English
Article number	1800143
Journal	Advanced Electronic Materials
Volume	5
Issue number	1
DOIs	https://doi.org/10.1002/aelm.201800143
State	Published - Jan 2019
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

electrical characterization
electronic synapses
nanofabrication
resistive random-access memories
resistive switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1002/aelm.201800143

Cite this

Lanza, M., Wong, H. S. P., Pop, E., Ielmini, D., Strukov, D., Regan, B. C., Larcher, L., Villena, M. A., Yang, J. J., Goux, L., Belmonte, A., Yang, Y., Puglisi, F. M., Kang, J., Magyari-Köpe, B., Yalon, E., Kenyon, A., Buckwell, M., Mehonic, A., ... Shi, Y. (2019). Recommended Methods to Study Resistive Switching Devices. Advanced Electronic Materials, 5(1), Article 1800143. https://doi.org/10.1002/aelm.201800143

@article{cc40bbe69df34008aad7854c2c1b25ee,

title = "Recommended Methods to Study Resistive Switching Devices",

abstract = "Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.",

keywords = "electrical characterization, electronic synapses, nanofabrication, resistive random-access memories, resistive switching",

author = "Mario Lanza and Wong, \{H. S.Philip\} and Eric Pop and Daniele Ielmini and Dimitri Strukov and Regan, \{Brian C.\} and Luca Larcher and Villena, \{Marco A.\} and Yang, \{J. Joshua\} and Ludovic Goux and Attilio Belmonte and Yuchao Yang and Puglisi, \{Francesco M.\} and Jinfeng Kang and Blanka Magyari-K{\"o}pe and Eilam Yalon and Anthony Kenyon and Mark Buckwell and Adnan Mehonic and Alexander Shluger and Haitong Li and Hou, \{Tuo Hung\} and Boris Hudec and Deji Akinwande and Ruijing Ge and Stefano Ambrogio and Roldan, \{Juan B.\} and Enrique Miranda and Jordi Su{\~n}e and Pey, \{Kin Leong\} and Xing Wu and Nagarajan Raghavan and Ernest Wu and Lu, \{Wei D.\} and Gabriele Navarro and Weidong Zhang and Huaqiang Wu and Runwei Li and Alexander Holleitner and Ursula Wurstbauer and Lemme, \{Max C.\} and Ming Liu and Shibing Long and Qi Liu and Hangbing Lv and Andrea Padovani and Paolo Pavan and Ilia Valov and Xu Jing and Tingting Han and Kaichen Zhu and Shaochuan Chen and Fei Hui and Yuanyuan Shi",

note = "Funding Information: This work was supported by the Young 1000 Global Talent Recruitment Program of the Ministry of Education of China, the National Natural Science Foundation of China (grant nos. 61502326, 41550110223, and 11661131002), the Jiangsu Government (grant no. BK20150343), and the Ministry of Finance of China (grant no. SX21400213). The Collaborative Innovation Center of Suzhou Nano Science \& Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials \& Devices, and the Priority Academic Program Development of Jiangsu Higher Education Institutions are also acknowledged. Stanford coauthors acknowledge support from the Non-volatile Memory Technology Research Initiative (NMTRI). An Chen from IBM is acknowledged for revision of Section 5. Alok Ranjan from Singapore University of Technology and Design is acknowledged for useful discussion on Section 3.5. This article is part of the Advanced Electronic Materials Excellence in Electronics series, which highlights the top papers in the fields of electronics and magnetic materials. Funding Information: This work was supported by the Young 1000 Global Talent Recruitment Program of the Ministry of Education of China, the National Natural Science Foundation of China (grant nos. 61502326, 41550110223, and 11661131002), the Jiangsu Government (grant no. BK20150343), and the Ministry of Finance of China (grant no. SX21400213). The Collaborative Innovation Center of Suzhou Nano Science \& Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials \& Devices, and the Priority Academic Program Development of Jiangsu Higher Education Institutions are also acknowledged. Stanford coauthors acknowledge support from the Non-volatile Memory Technology Research Initiative (NMTRI). An Chen from IBM is acknowledged for revision of Section. Alok Ranjan from Singapore University of Technology and Design is acknowledged for useful discussion on Section. This article is part of the Advanced Electronic Materials Excellence in Electronics series, which highlights the top papers in the fields of electronics and magnetic materials. Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2019",

month = jan,

doi = "10.1002/aelm.201800143",

language = "English",

volume = "5",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "John Wiley and Sons Inc",

number = "1",

}

Lanza, M, Wong, HSP, Pop, E, Ielmini, D, Strukov, D, Regan, BC, Larcher, L, Villena, MA, Yang, JJ, Goux, L, Belmonte, A, Yang, Y, Puglisi, FM, Kang, J, Magyari-Köpe, B, Yalon, E, Kenyon, A, Buckwell, M, Mehonic, A, Shluger, A, Li, H, Hou, TH, Hudec, B, Akinwande, D, Ge, R, Ambrogio, S, Roldan, JB, Miranda, E, Suñe, J, Pey, KL, Wu, X, Raghavan, N, Wu, E, Lu, WD, Navarro, G, Zhang, W, Wu, H, Li, R, Holleitner, A, Wurstbauer, U, Lemme, MC, Liu, M, Long, S, Liu, Q, Lv, H, Padovani, A, Pavan, P, Valov, I, Jing, X, Han, T, Zhu, K, Chen, S, Hui, F & Shi, Y 2019, 'Recommended Methods to Study Resistive Switching Devices', Advanced Electronic Materials, vol. 5, no. 1, 1800143. https://doi.org/10.1002/aelm.201800143

TY - JOUR

T1 - Recommended Methods to Study Resistive Switching Devices

AU - Lanza, Mario

AU - Wong, H. S.Philip

AU - Pop, Eric

AU - Ielmini, Daniele

AU - Strukov, Dimitri

AU - Regan, Brian C.

AU - Larcher, Luca

AU - Villena, Marco A.

AU - Yang, J. Joshua

AU - Goux, Ludovic

AU - Belmonte, Attilio

AU - Yang, Yuchao

AU - Puglisi, Francesco M.

AU - Kang, Jinfeng

AU - Magyari-Köpe, Blanka

AU - Yalon, Eilam

AU - Kenyon, Anthony

AU - Buckwell, Mark

AU - Mehonic, Adnan

AU - Shluger, Alexander

AU - Li, Haitong

AU - Hou, Tuo Hung

AU - Hudec, Boris

AU - Akinwande, Deji

AU - Ge, Ruijing

AU - Ambrogio, Stefano

AU - Roldan, Juan B.

AU - Miranda, Enrique

AU - Suñe, Jordi

AU - Pey, Kin Leong

AU - Wu, Xing

AU - Raghavan, Nagarajan

AU - Wu, Ernest

AU - Lu, Wei D.

AU - Navarro, Gabriele

AU - Zhang, Weidong

AU - Wu, Huaqiang

AU - Li, Runwei

AU - Holleitner, Alexander

AU - Wurstbauer, Ursula

AU - Lemme, Max C.

AU - Liu, Ming

AU - Long, Shibing

AU - Liu, Qi

AU - Lv, Hangbing

AU - Padovani, Andrea

AU - Pavan, Paolo

AU - Valov, Ilia

AU - Jing, Xu

AU - Han, Tingting

AU - Zhu, Kaichen

AU - Chen, Shaochuan

AU - Hui, Fei

AU - Shi, Yuanyuan

N1 - Funding Information: This work was supported by the Young 1000 Global Talent Recruitment Program of the Ministry of Education of China, the National Natural Science Foundation of China (grant nos. 61502326, 41550110223, and 11661131002), the Jiangsu Government (grant no. BK20150343), and the Ministry of Finance of China (grant no. SX21400213). The Collaborative Innovation Center of Suzhou Nano Science & Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, and the Priority Academic Program Development of Jiangsu Higher Education Institutions are also acknowledged. Stanford coauthors acknowledge support from the Non-volatile Memory Technology Research Initiative (NMTRI). An Chen from IBM is acknowledged for revision of Section 5. Alok Ranjan from Singapore University of Technology and Design is acknowledged for useful discussion on Section 3.5. This article is part of the Advanced Electronic Materials Excellence in Electronics series, which highlights the top papers in the fields of electronics and magnetic materials. Funding Information: This work was supported by the Young 1000 Global Talent Recruitment Program of the Ministry of Education of China, the National Natural Science Foundation of China (grant nos. 61502326, 41550110223, and 11661131002), the Jiangsu Government (grant no. BK20150343), and the Ministry of Finance of China (grant no. SX21400213). The Collaborative Innovation Center of Suzhou Nano Science & Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, and the Priority Academic Program Development of Jiangsu Higher Education Institutions are also acknowledged. Stanford coauthors acknowledge support from the Non-volatile Memory Technology Research Initiative (NMTRI). An Chen from IBM is acknowledged for revision of Section. Alok Ranjan from Singapore University of Technology and Design is acknowledged for useful discussion on Section. This article is part of the Advanced Electronic Materials Excellence in Electronics series, which highlights the top papers in the fields of electronics and magnetic materials. Publisher Copyright: © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2019/1

Y1 - 2019/1

N2 - Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

AB - Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

KW - electrical characterization

KW - electronic synapses

KW - nanofabrication

KW - resistive random-access memories

KW - resistive switching

UR - https://www.scopus.com/pages/publications/85053911581

U2 - 10.1002/aelm.201800143

DO - 10.1002/aelm.201800143

M3 - Review article

SN - 2199-160X

VL - 5

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 1

M1 - 1800143

ER -

Recommended Methods to Study Resistive Switching Devices

Abstract

UN SDGs

Keywords

ASJC Scopus subject areas

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