Reaction-bonded B4C/SiC composites synthesized by microwave heating

Mathieu Dutto; Dominique Goeuriot; Sébastien Saunier; Sylvain Marinel; Nachum Frage; Shmuel Hayun

doi:10.1111/ijac.13211

Reaction-bonded B₄C/SiC composites synthesized by microwave heating

Mathieu Dutto, Dominique Goeuriot, Sébastien Saunier, Sylvain Marinel, Nachum Frage, Shmuel Hayun

Department of Materials Engineering

Ben-Gurion University of the Negev

Research output: Contribution to journal › Article › peer-review

Abstract

The reaction-bonding technique was used to synthesize boron carbide (B₄C) - silicon carbide (SiC) composites by microwave heating. Preforms of porous B₄C were obtained by compaction followed or not by partial densification. Then, the material was infiltrated by molten silicon under a microwave heating. The influence of the thermal cycles (T: 1400-1500°C, t: 5-120 minutes) is low. The hardness of boron carbide is comparable to that of alumina (15-19 GPa) for a much lower density (≈2.5 g/cm³ for B₄C-based material instead of 3.95 g/cm³ for alumina). These properties make this composite, obtained by microwave heating, a good candidate for ballistic applications.

Original language	American English
Pages (from-to)	1287-1294
Number of pages	8
Journal	International Journal of Applied Ceramic Technology
Volume	16
Issue number	4
DOIs	https://doi.org/10.1111/ijac.13211
State	Published - 1 Jul 2019

Keywords

boron carbide
microwaves
reaction bonding

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Condensed Matter Physics
Marketing
Materials Chemistry

Access to Document

10.1111/ijac.13211

Cite this

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title = "Reaction-bonded B4C/SiC composites synthesized by microwave heating",

abstract = "The reaction-bonding technique was used to synthesize boron carbide (B4C) - silicon carbide (SiC) composites by microwave heating. Preforms of porous B4C were obtained by compaction followed or not by partial densification. Then, the material was infiltrated by molten silicon under a microwave heating. The influence of the thermal cycles (T: 1400-1500°C, t: 5-120 minutes) is low. The hardness of boron carbide is comparable to that of alumina (15-19 GPa) for a much lower density (≈2.5 g/cm3 for B4C-based material instead of 3.95 g/cm3 for alumina). These properties make this composite, obtained by microwave heating, a good candidate for ballistic applications.",

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AU - Dutto, Mathieu

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AU - Saunier, Sébastien

AU - Marinel, Sylvain

AU - Frage, Nachum

AU - Hayun, Shmuel

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AB - The reaction-bonding technique was used to synthesize boron carbide (B4C) - silicon carbide (SiC) composites by microwave heating. Preforms of porous B4C were obtained by compaction followed or not by partial densification. Then, the material was infiltrated by molten silicon under a microwave heating. The influence of the thermal cycles (T: 1400-1500°C, t: 5-120 minutes) is low. The hardness of boron carbide is comparable to that of alumina (15-19 GPa) for a much lower density (≈2.5 g/cm3 for B4C-based material instead of 3.95 g/cm3 for alumina). These properties make this composite, obtained by microwave heating, a good candidate for ballistic applications.

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