Reaching saturation in patterned source vertical organic field effect transistors

Michael Greenman, Gil Sheleg, Chang-Min Keum, Jonathan Zucker, Bjorn Lussem, Nir Tessler

Research output: Contribution to journalArticlepeer-review

Abstract

Like most of the vertical transistors, the Patterned Source Vertical Organic Field Effect Transistor (PS-VOFET) does not exhibit saturation in the output characteristics. The importance of achieving a good saturation is demonstrated in a vertical organic light emitting transistor; however, this is critical for any application requiring the transistor to act as a current source. Thereafter, a 2D simulation tool was used to explain the physical mechanisms that prevent saturation as well as to suggest ways to overcome them. We found that by isolating the source facet from the drain-source electric field, the PS-VOFET architecture exhibits saturation. The process used for fabricating such saturation-enhancing structure is then described. The new device demonstrated close to an ideal saturation with only 1% change in the drain-source current over a 10 V change in the drain-source voltage.

Original languageEnglish
Article number204503
JournalJournal of Applied Physics
Volume121
Issue number20
DOIs
StatePublished - 28 May 2017

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Reaching saturation in patterned source vertical organic field effect transistors'. Together they form a unique fingerprint.

Cite this