Probing the surface states in Bi 2Se 3 using the Shubnikov-de Haas effect

M. Petrushevsky; E. Lahoud; A. Ron; E. Maniv; I. Diamant; I. Neder; S. Wiedmann; V. K. Guduru; F. Chiappini; U. Zeitler; J. C. Maan; K. Chashka; A. Kanigel; Y. Dagan

doi:https://doi.org/10.1103/PhysRevB.86.045131

Probing the surface states in Bi ₂Se ₃ using the Shubnikov-de Haas effect

M. Petrushevsky, E. Lahoud, A. Ron, E. Maniv, I. Diamant, I. Neder, S. Wiedmann, V. K. Guduru, F. Chiappini, U. Zeitler, J. C. Maan, K. Chashka, A. Kanigel, Y. Dagan

Tel Aviv University, Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Shubnikov-de Haas oscillations are observed in Bi ₂Se ₃ flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass, and Dingle temperature. The Fermi momentum obtained is in agreement with angle-resolved photoemission spectroscopy measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic fields. The standard theoretical considerations fail to explain the observed behavior.

Original language	American English
Article number	045131
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.86.045131
State	Published - 26 Jul 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

https://doi.org/10.1103/PhysRevB.86.045131

Cite this

Petrushevsky, M., Lahoud, E., Ron, A., Maniv, E., Diamant, I., Neder, I., Wiedmann, S., Guduru, V. K., Chiappini, F., Zeitler, U., Maan, J. C., Chashka, K., Kanigel, A., & Dagan, Y. (2012). Probing the surface states in Bi ₂Se ₃ using the Shubnikov-de Haas effect. Physical Review B - Condensed Matter and Materials Physics, 86(4), Article 045131. https://doi.org/10.1103/PhysRevB.86.045131

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abstract = "Shubnikov-de Haas oscillations are observed in Bi 2Se 3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass, and Dingle temperature. The Fermi momentum obtained is in agreement with angle-resolved photoemission spectroscopy measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic fields. The standard theoretical considerations fail to explain the observed behavior.",

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Petrushevsky, M, Lahoud, E, Ron, A , Maniv, E, Diamant, I, Neder, I, Wiedmann, S, Guduru, VK, Chiappini, F, Zeitler, U, Maan, JC, Chashka, K, Kanigel, A & Dagan, Y 2012, 'Probing the surface states in Bi ₂Se ₃ using the Shubnikov-de Haas effect', Physical Review B - Condensed Matter and Materials Physics, vol. 86, no. 4, 045131. https://doi.org/10.1103/PhysRevB.86.045131

TY - JOUR

T1 - Probing the surface states in Bi 2Se 3 using the Shubnikov-de Haas effect

AU - Petrushevsky, M.

AU - Lahoud, E.

AU - Ron, A.

AU - Maniv, E.

AU - Diamant, I.

AU - Neder, I.

AU - Wiedmann, S.

AU - Guduru, V. K.

AU - Chiappini, F.

AU - Zeitler, U.

AU - Maan, J. C.

AU - Chashka, K.

AU - Kanigel, A.

AU - Dagan, Y.

PY - 2012/7/26

Y1 - 2012/7/26

N2 - Shubnikov-de Haas oscillations are observed in Bi 2Se 3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass, and Dingle temperature. The Fermi momentum obtained is in agreement with angle-resolved photoemission spectroscopy measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic fields. The standard theoretical considerations fail to explain the observed behavior.

AB - Shubnikov-de Haas oscillations are observed in Bi 2Se 3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass, and Dingle temperature. The Fermi momentum obtained is in agreement with angle-resolved photoemission spectroscopy measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic fields. The standard theoretical considerations fail to explain the observed behavior.

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