Probing self-heating in RRAM devices by sub-100 nm spatially resolved thermometry

Sanchit Deshmukh; Miguel Munoz Rojo; Eilam Yalon; Sam Vaziri; Eric Pop

doi:10.1109/DRC.2018.8442187

Probing self-heating in RRAM devices by sub-100 nm spatially resolved thermometry

Sanchit Deshmukh, Miguel Munoz Rojo, Eilam Yalon, Sam Vaziri, Eric Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Resistive memory (RRAM) is a promising technology for high density, non-volatile data storage. Metal-oxide RRAM involves forming and breaking conductive filaments (CF) in an oxide like Hf0₂ as the mechanism of data storage. CFs are sub-50 nm in diameter [1], causing sharp temperature gradients within the RRAM oxide. However, imaging individual CFs in RRAM devices is challenging due to their nanoscale size and the presence of the top electrode (TE). While previous works have performed electrical [2] or optical averaging [3] of CF temperature, evaluating the heating of a single CF within RRAM has remained an open problem.

Original language	English
Title of host publication	2018 76th Device Research Conference, DRC 2018
DOIs	https://doi.org/10.1109/DRC.2018.8442187
State	Published - 20 Aug 2018
Externally published	Yes
Event	76th Device Research Conference, DRC 2018 - Santa Barbara, United States Duration: 24 Jun 2018 → 27 Jun 2018

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2018-June

Conference

Conference	76th Device Research Conference, DRC 2018
Country/Territory	United States
City	Santa Barbara
Period	24/06/18 → 27/06/18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2018.8442187

Cite this

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title = "Probing self-heating in RRAM devices by sub-100 nm spatially resolved thermometry",

abstract = "Resistive memory (RRAM) is a promising technology for high density, non-volatile data storage. Metal-oxide RRAM involves forming and breaking conductive filaments (CF) in an oxide like Hf02 as the mechanism of data storage. CFs are sub-50 nm in diameter [1], causing sharp temperature gradients within the RRAM oxide. However, imaging individual CFs in RRAM devices is challenging due to their nanoscale size and the presence of the top electrode (TE). While previous works have performed electrical [2] or optical averaging [3] of CF temperature, evaluating the heating of a single CF within RRAM has remained an open problem.",

author = "Sanchit Deshmukh and Rojo, {Miguel Munoz} and Eilam Yalon and Sam Vaziri and Eric Pop",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 76th Device Research Conference, DRC 2018 ; Conference date: 24-06-2018 Through 27-06-2018",

year = "2018",

month = aug,

day = "20",

doi = "10.1109/DRC.2018.8442187",

language = "الإنجليزيّة",

isbn = "9781538630280",

series = "Device Research Conference - Conference Digest, DRC",

booktitle = "2018 76th Device Research Conference, DRC 2018",

}

Deshmukh, S, Rojo, MM, Yalon, E, Vaziri, S & Pop, E 2018, Probing self-heating in RRAM devices by sub-100 nm spatially resolved thermometry. in 2018 76th Device Research Conference, DRC 2018., 8442187, Device Research Conference - Conference Digest, DRC, vol. 2018-June, 76th Device Research Conference, DRC 2018, Santa Barbara, United States, 24/06/18. https://doi.org/10.1109/DRC.2018.8442187

Probing self-heating in RRAM devices by sub-100 nm spatially resolved thermometry. / Deshmukh, Sanchit; Rojo, Miguel Munoz; Yalon, Eilam et al.
2018 76th Device Research Conference, DRC 2018. 2018. 8442187 (Device Research Conference - Conference Digest, DRC; Vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Probing self-heating in RRAM devices by sub-100 nm spatially resolved thermometry

AU - Deshmukh, Sanchit

AU - Rojo, Miguel Munoz

AU - Yalon, Eilam

AU - Vaziri, Sam

AU - Pop, Eric

PY - 2018/8/20

Y1 - 2018/8/20

N2 - Resistive memory (RRAM) is a promising technology for high density, non-volatile data storage. Metal-oxide RRAM involves forming and breaking conductive filaments (CF) in an oxide like Hf02 as the mechanism of data storage. CFs are sub-50 nm in diameter [1], causing sharp temperature gradients within the RRAM oxide. However, imaging individual CFs in RRAM devices is challenging due to their nanoscale size and the presence of the top electrode (TE). While previous works have performed electrical [2] or optical averaging [3] of CF temperature, evaluating the heating of a single CF within RRAM has remained an open problem.

AB - Resistive memory (RRAM) is a promising technology for high density, non-volatile data storage. Metal-oxide RRAM involves forming and breaking conductive filaments (CF) in an oxide like Hf02 as the mechanism of data storage. CFs are sub-50 nm in diameter [1], causing sharp temperature gradients within the RRAM oxide. However, imaging individual CFs in RRAM devices is challenging due to their nanoscale size and the presence of the top electrode (TE). While previous works have performed electrical [2] or optical averaging [3] of CF temperature, evaluating the heating of a single CF within RRAM has remained an open problem.

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U2 - 10.1109/DRC.2018.8442187

DO - 10.1109/DRC.2018.8442187

M3 - منشور من مؤتمر

SN - 9781538630280

T3 - Device Research Conference - Conference Digest, DRC

BT - 2018 76th Device Research Conference, DRC 2018

T2 - 76th Device Research Conference, DRC 2018

Y2 - 24 June 2018 through 27 June 2018

ER -

Probing self-heating in RRAM devices by sub-100 nm spatially resolved thermometry

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

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