Abstract
We present new codes that allow data rewriting without physical erase on multi-level cell technologies. The codes are practical in that they use a small number (e.g. 2) of cells, and allow data bits with different update characteristics (hot vs. cold).
| Original language | American English |
|---|---|
| Title of host publication | 3rd Annual Non-Volatile Memories Workshop 2012 |
| Subtitle of host publication | NVMW-2012 |
| State | Published - 2013 |
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