Abstract
We present new codes that allow data rewriting without physical erase on multi-level cell technologies. The codes are practical in that they use a small number (e.g. 2) of cells, and allow data bits with different update characteristics (hot vs. cold).
Original language | American English |
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Title of host publication | 3rd Annual Non-Volatile Memories Workshop 2012 |
Subtitle of host publication | NVMW-2012 |
State | Published - 2013 |