Potential barrier height at the grain boundaries of a poly-silicon nanowire

Assaf Shamir; Iddo Amit; Danny Englander; Dror Horvitz; Yossi Rosenwaks

doi:https://doi.org/10.1088/0957-4484/26/35/355201

Potential barrier height at the grain boundaries of a poly-silicon nanowire

Assaf Shamir, Iddo Amit, Danny Englander, Dror Horvitz, Yossi Rosenwaks

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

We present measurements of the potential barrier height and its dependence on grain size in poly-silicon nanowire (P-SiNW) arrays. Measurements conducted using Kelvin probe force microscopy coupled with electrostatic simulations, enabled us also to extract the density of the grain boundary interface states and their energy distribution. In addition it was shown that the barrier height scales with the grain size as the square of the grain radius.

Original language	English
Article number	355201
Journal	Nanotechnology
Volume	26
Issue number	35
DOIs	https://doi.org/10.1088/0957-4484/26/35/355201
State	Published - 4 Sep 2015

Keywords

Kelvin probe force microscopy
grain boundaries
nanowires
polycrystalline silicon
potential barrier

All Science Journal Classification (ASJC) codes

General Chemistry
Mechanics of Materials
Mechanical Engineering
Bioengineering
Electrical and Electronic Engineering
General Materials Science

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https://doi.org/10.1088/0957-4484/26/35/355201

Cite this

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abstract = "We present measurements of the potential barrier height and its dependence on grain size in poly-silicon nanowire (P-SiNW) arrays. Measurements conducted using Kelvin probe force microscopy coupled with electrostatic simulations, enabled us also to extract the density of the grain boundary interface states and their energy distribution. In addition it was shown that the barrier height scales with the grain size as the square of the grain radius.",

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AU - Shamir, Assaf

AU - Amit, Iddo

AU - Englander, Danny

AU - Horvitz, Dror

AU - Rosenwaks, Yossi

PY - 2015/9/4

Y1 - 2015/9/4

N2 - We present measurements of the potential barrier height and its dependence on grain size in poly-silicon nanowire (P-SiNW) arrays. Measurements conducted using Kelvin probe force microscopy coupled with electrostatic simulations, enabled us also to extract the density of the grain boundary interface states and their energy distribution. In addition it was shown that the barrier height scales with the grain size as the square of the grain radius.

AB - We present measurements of the potential barrier height and its dependence on grain size in poly-silicon nanowire (P-SiNW) arrays. Measurements conducted using Kelvin probe force microscopy coupled with electrostatic simulations, enabled us also to extract the density of the grain boundary interface states and their energy distribution. In addition it was shown that the barrier height scales with the grain size as the square of the grain radius.

KW - Kelvin probe force microscopy

KW - grain boundaries

KW - nanowires

KW - polycrystalline silicon

KW - potential barrier

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DO - https://doi.org/10.1088/0957-4484/26/35/355201

M3 - مقالة

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JO - Nanotechnology

JF - Nanotechnology

IS - 35

M1 - 355201

ER -

Potential barrier height at the grain boundaries of a poly-silicon nanowire

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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