Point defects, doping and the path to n-type SnTe

Engineering & Materials Science

• Fermi level 100%
• Point defects 88%
• Doping (additives) 64%
• Vacancies 52%
• Conduction bands 49%
• Valence bands 34%
• Energy gap 32%
• Oxygen 31%
• Electronic structure 28%
• Defects 26%
• Impurities 18%
• Electrons 9%
• Semiconductor materials 8%
• Experiments 3%

Chemistry

• Crystal Point Defect 74%
• Interstitial 60%
• Crystal Displacement 50%
• Fermi Level 50%
• Conduction Band 23%
• Band Gap 16%
• Valence Band 15%
• Dioxygen 14%
• Doping Material 12%
• Electronic State 10%
• Conductivity 9%
• Halogen 6%
• Semiconductor 5%
• Environment 4%
• Electron Particle 3%