Abstract
For the past decades, group III-V and II-VI semiconductors have been at the forefront of semiconductor advances. However, the ionic bonds and non-centrosymmetry of their crystal structure - wurtzite or zinc-blende - imply that these materials are prone to exhibit piezoelectric effects. While piezoelectricity can be desired in some semiconductor devices, it can be harmful to others. After a general overview of the structural, piezoelectric, and electronic properties of group III-V and II-VI semiconductor materials we present the effect of piezoelectricity on devices and discuss mitigation strategies in relation to piezoelectricity.
| Original language | English |
|---|---|
| Title of host publication | Encyclopedia of Smart Materials |
| Publisher | Elsevier |
| Pages | 35-49 |
| Number of pages | 15 |
| ISBN (Electronic) | 9780128157336 |
| ISBN (Print) | 9780128157329 |
| DOIs | |
| State | Published - 1 Jan 2021 |
Keywords
- Bandgap
- Optoelectronics
- Piezoelectricity
- Piezotronics
- Semiconductor
- Wurtzite
- Zinc-blende
All Science Journal Classification (ASJC) codes
- General Engineering
- General Materials Science