Abstract
A method is presented for use in manufacture of a semiconductor device, such as a photovoltaic cell. The method comprises: providing a structure comprising a ZnO layer; applying a surface treatment to said structure for a certain time period to form a layer of ZnS on said ZnO layer; and depositing an active structure on said ZnS layer. The active structure may be a light absorbing structure, including a light absorbing semiconductor or a molecular light absorbing dye. The provision of the ZnS buffer layer between the ZnO layer and the active structure improves the device performance.
| Original language | English |
|---|---|
| Patent number | US 2013098440 A1 |
| State | Published - 2013 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
-
SDG 7 Affordable and Clean Energy
Fingerprint
Dive into the research topics of 'Photovoltaic cell and method of its manufacture'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver