Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS2

Alexander Hötger; Wolfgang Männer; Tomer Amit; Daniel Hernangómez-Pérez; Takashi Taniguchi; Kenji Watanabe; Ursula Wurstbauer; Jonathan J. Finley; Sivan Refaely-Abramson; Christoph Kastl; Alexander W. Holleitner

doi:10.1021/acs.nanolett.3c03517

Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS₂

Alexander Hötger, Wolfgang Männer, Tomer Amit, Daniel Hernangómez-Pérez, Takashi Taniguchi, Kenji Watanabe, Ursula Wurstbauer, Jonathan J. Finley, Sivan Refaely-Abramson, Christoph Kastl, Alexander W. Holleitner

Department of Molecular Chemistry and Materials Science Perlman

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the optical absorption characteristics of selectively positioned sulfur vacancies in monolayer MoS₂, as observed by photovoltage and photocurrent experiments in an atomistic vertical tunneling circuit at cryogenic and room temperature. Charge carriers are resonantly photoexcited within the defect states before they tunnel through an hBN tunneling barrier to a graphene-based drain contact. Both photovoltage and photocurrent characteristics confirm the optical absorption spectrum as derived from ab initio GW and Bethe-Salpeter equation approximations. Our results reveal the potential of single-vacancy tunneling devices as atomic-scale photodiodes.

Original language	English
Pages (from-to)	11655-11661
Number of pages	7
Journal	Nano Letters
Volume	23
Issue number	24
Early online date	6 Dec 2023
DOIs	https://doi.org/10.1021/acs.nanolett.3c03517
State	Published - 27 Dec 2023

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/acs.nanolett.3c03517

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title = "Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS2",

abstract = "We report on the optical absorption characteristics of selectively positioned sulfur vacancies in monolayer MoS2, as observed by photovoltage and photocurrent experiments in an atomistic vertical tunneling circuit at cryogenic and room temperature. Charge carriers are resonantly photoexcited within the defect states before they tunnel through an hBN tunneling barrier to a graphene-based drain contact. Both photovoltage and photocurrent characteristics confirm the optical absorption spectrum as derived from ab initio GW and Bethe-Salpeter equation approximations. Our results reveal the potential of single-vacancy tunneling devices as atomic-scale photodiodes.",

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doi = "10.1021/acs.nanolett.3c03517",

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T1 - Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS2

AU - Hötger, Alexander

AU - Männer, Wolfgang

AU - Amit, Tomer

AU - Hernangómez-Pérez, Daniel

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Wurstbauer, Ursula

AU - Finley, Jonathan J.

AU - Refaely-Abramson, Sivan

AU - Kastl, Christoph

AU - Holleitner, Alexander W.

PY - 2023/12/27

Y1 - 2023/12/27

N2 - We report on the optical absorption characteristics of selectively positioned sulfur vacancies in monolayer MoS2, as observed by photovoltage and photocurrent experiments in an atomistic vertical tunneling circuit at cryogenic and room temperature. Charge carriers are resonantly photoexcited within the defect states before they tunnel through an hBN tunneling barrier to a graphene-based drain contact. Both photovoltage and photocurrent characteristics confirm the optical absorption spectrum as derived from ab initio GW and Bethe-Salpeter equation approximations. Our results reveal the potential of single-vacancy tunneling devices as atomic-scale photodiodes.

AB - We report on the optical absorption characteristics of selectively positioned sulfur vacancies in monolayer MoS2, as observed by photovoltage and photocurrent experiments in an atomistic vertical tunneling circuit at cryogenic and room temperature. Charge carriers are resonantly photoexcited within the defect states before they tunnel through an hBN tunneling barrier to a graphene-based drain contact. Both photovoltage and photocurrent characteristics confirm the optical absorption spectrum as derived from ab initio GW and Bethe-Salpeter equation approximations. Our results reveal the potential of single-vacancy tunneling devices as atomic-scale photodiodes.

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U2 - 10.1021/acs.nanolett.3c03517

DO - 10.1021/acs.nanolett.3c03517

M3 - مقالة

C2 - 38054904

SN - 1530-6984

VL - 23

SP - 11655

EP - 11661

JO - Nano Letters

JF - Nano Letters

IS - 24

ER -

Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS₂

Abstract

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