Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

Arzu Angi; Regina Sinelnikov; Al Meldrum; Jonathan G.C. Veinot; Isacc Balberg; Doron Azulay; Oded Millo; Bernhard Rieger

doi:10.1039/c6nr01435f

Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

Arzu Angi, Regina Sinelnikov, Al Meldrum, Jonathan G.C. Veinot, Isacc Balberg, Doron Azulay, Oded Millo, Bernhard Rieger

Racah Institute of Physics

The Hebrew University of Jerusalem

Research output: Contribution to journal › Article › peer-review

Abstract

Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.

Original language	English
Pages (from-to)	7849-7853
Number of pages	5
Journal	Nanoscale
Volume	8
Issue number	15
DOIs	https://doi.org/10.1039/c6nr01435f
State	Published - 21 Apr 2016

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1039/c6nr01435f

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title = "Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals",

abstract = "Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.",

author = "Arzu Angi and Regina Sinelnikov and Al Meldrum and Veinot, \{Jonathan G.C.\} and Isacc Balberg and Doron Azulay and Oded Millo and Bernhard Rieger",

note = "Publisher Copyright: {\textcopyright} 2016 The Royal Society of Chemistry.",

year = "2016",

month = apr,

day = "21",

doi = "10.1039/c6nr01435f",

language = "الإنجليزيّة",

volume = "8",

pages = "7849--7853",

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issn = "2040-3364",

publisher = "Royal Society of Chemistry",

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TY - JOUR

T1 - Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

AU - Angi, Arzu

AU - Sinelnikov, Regina

AU - Meldrum, Al

AU - Veinot, Jonathan G.C.

AU - Balberg, Isacc

AU - Azulay, Doron

AU - Millo, Oded

AU - Rieger, Bernhard

PY - 2016/4/21

Y1 - 2016/4/21

N2 - Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.

AB - Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.

UR - http://www.scopus.com/inward/record.url?scp=84964577561&partnerID=8YFLogxK

U2 - 10.1039/c6nr01435f

DO - 10.1039/c6nr01435f

M3 - مقالة

SN - 2040-3364

VL - 8

SP - 7849

EP - 7853

JO - Nanoscale

JF - Nanoscale

IS - 15

ER -

Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

Abstract

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