Photoinduced Currents (Nanoamperes) at Single Crystalline Cadmium Telluride Surfaces Analyzed at Ambient by Scanning Tunneling Microscopy

G. Golan, M. Azoulay

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Scanning Tunneling Microscopy (STM) is being employed to study photoexcited charged carriers at semiconductors surfaces. However, so far, the investigation was limited to relatively low resistivity materials, and the experimental setup was placed within an Ultra High Vacuum (UHV) chamber. In the current research, we were able to carry out photo assisted STM analysis at ambient on well-determined cadmium telluride single crystalline surfaces with high resistivity of about 107 Ω•cm, oriented to the (111) Cd, (111) Te and (110) cleaved surface. The recorded data was found to be in good agreement with the published results that were achieved by surface photo-voltage spectroscopy. Such information may be useful as an effective characterization method for materials prior to the fabrication of wide band-gap semiconductor detectors.

Original languageEnglish
Title of host publication2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350347760
DOIs
StatePublished - 2023
Event33rd IEEE International Conference on Microelectronics, MIEL 2023 - Nis, Serbia
Duration: 16 Oct 202318 Oct 2023

Publication series

Name2023 IEEE 33rd International Conference on Microelectronics, MIEL 2023

Conference

Conference33rd IEEE International Conference on Microelectronics, MIEL 2023
Country/TerritorySerbia
CityNis
Period16/10/2318/10/23

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Instrumentation
  • Hardware and Architecture
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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