Phonon thermoelectric transistors and rectifiers

JH Jiang, M Kulkarni, Dagan Segal, Yoseph Imry

Research output: Contribution to journalArticlepeer-review


We describe nonlinear phonon-thermoelectric devices where charge current and electronic and phononic heat currents are coupled, driven by voltage and temperature biases, when phonon-assisted inelastic processes dominate the transport. Our thermoelectric transistors and rectifiers can be realized in a gate-tunable double quantum-dot system embedded in a nanowire which is realizable within current technology. The inelastic electron-phonon scattering processes are found to induce pronounced charge, heat, and cross rectification effects, as well as a thermal transistor effect that, remarkably, can appear in the present model even in the linear-response regime without relying on the onset of negative differential thermal conductance.
Original languageEnglish
Article number45309
Number of pages9
JournalPhysical Review B
Issue number4
StatePublished - Jul 2015


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