Performance of flash memories with different binary labelings: A multi-user perspective

Pengfei Huang, Paul H. Siegel, Eitan Yaakobi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we study the performance of different decoding schemes for multilevel flash memories where each page in every block is encoded independently. We focus on the multi-level cell (MLC) flash memory, which is modeled as a two-user multiple access channel suffering from asymmetric noise. The uniform rate regions and sum rates of Treating Interference as Noise (TIN) decoding and Successive Cancelation (SC) decoding are investigated for a Program/Erase (P/E) cycling model and a data retention model. We examine the effect of different binary labelings of the cell levels, as well as the impact of further quantization of the memory output (i.e., additional read thresholds). Finally, we extend our analysis to the three-level cell (TLC) flash memory.

Original languageEnglish
Title of host publicationProceedings - ISIT 2016; 2016 IEEE International Symposium on Information Theory
Pages955-959
Number of pages5
ISBN (Electronic)9781509018062
DOIs
StatePublished - 10 Aug 2016
Event2016 IEEE International Symposium on Information Theory, ISIT 2016 - Barcelona, Spain
Duration: 10 Jul 201615 Jul 2016

Publication series

NameIEEE International Symposium on Information Theory - Proceedings
Volume2016-August

Conference

Conference2016 IEEE International Symposium on Information Theory, ISIT 2016
Country/TerritorySpain
CityBarcelona
Period10/07/1615/07/16

All Science Journal Classification (ASJC) codes

  • Theoretical Computer Science
  • Information Systems
  • Modelling and Simulation
  • Applied Mathematics

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