Abstract
Multi-level memory cells are used in non-volatile memories to increase the storage density. Using multi-level cells, however, imposes lower read and write speeds, limiting their usability with high-performing applications. In this work we study the tradeoff between storage density and write/read speeds using codes. The contributions are codes that give high-performance write and read processes with minimal reduction in storage density. We describe the codes, give a detailed analytical treatment of their information rate and speed, provide encoding/decoding algorithms, and compare them with more basic access schemes and upper bounds. Using performance coding enables accessing the memory with variable access speeds, thus creating heterogenous storage devices serving a variety of applications with improved efficiency.
Original language | English |
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Article number | 7004000 |
Pages (from-to) | 581-591 |
Number of pages | 11 |
Journal | IEEE Transactions on Communications |
Volume | 63 |
Issue number | 3 |
DOIs | |
State | Published - 1 Mar 2015 |
Keywords
- Channel coding
- Codes
- Flash memory cells
- Nonvolatile memory
- Phase change memory
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering