Patterning of epitaxial VO₂ microstructures by a hightemperature lift-off process

Keyphrases

• Microstructure 100%
• High Temperature 100%
• Fabrication Methods 100%
• Epitaxial 100%
• Metal-insulator Transition 100%
• Lift-off 100%
• Resilient 50%
• Beneficial Properties 50%
• Transistor 50%
• NaOH Solution 50%
• Deposition Conditions 50%
• Lithography 50%
• Epitaxial Growth 50%
• Gas Conditions 50%
• Patterned Film 50%
• Near-room Temperature 50%
• AlOx 50%
• Reactive Gas 50%
• NaOH Concentration 50%
• VO2 Film 50%
• Oxide Deposition 50%
• Oxide Electronics 50%
• Conventional Polymers 50%
• Polymer Mask 50%
• High-temperature Gas 50%

Material Science

• Film 100%
• Oxide Compound 100%
• Transistor 50%
• Lithography 50%
• Epitaxy 50%