Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

Igor Krylov; Boaz Pokroy; Dan Ritter; Moshe Eizenberg

doi:10.1116/1.4973300

Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

Igor Krylov, Boaz Pokroy, Dan Ritter, Moshe Eizenberg

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

The passivation of InGaAs by thin AlN layers allows a significant reduction of the interface state density compared to that of the widely used Al₂O₃/InGaAs structure. The influence of the AlN layer thickness on the interface electrical properties, as well as the role of the post-deposition annealing, was carefully examined. Ultrathin AlN layers (∼1 nm) provide high quality interfacial electrical properties after a mild anneal (400 °C). Thick AlN passivation layers require annealing at higher temperature (500 °C) to achieve low interface states density. Possible explanations of the observed trend are suggested.

Original language	English
Article number	011205
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	35
Issue number	1
DOIs	https://doi.org/10.1116/1.4973300
State	Published - 1 Jan 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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@article{dbac65005fa54419978e4a32b12e3ece,

title = "Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications",

abstract = "The passivation of InGaAs by thin AlN layers allows a significant reduction of the interface state density compared to that of the widely used Al2O3/InGaAs structure. The influence of the AlN layer thickness on the interface electrical properties, as well as the role of the post-deposition annealing, was carefully examined. Ultrathin AlN layers (∼1 nm) provide high quality interfacial electrical properties after a mild anneal (400 °C). Thick AlN passivation layers require annealing at higher temperature (500 °C) to achieve low interface states density. Possible explanations of the observed trend are suggested.",

author = "Igor Krylov and Boaz Pokroy and Dan Ritter and Moshe Eizenberg",

note = "Publisher Copyright: {\textcopyright} 2017 American Vacuum Society.",

year = "2017",

month = jan,

day = "1",

doi = "10.1116/1.4973300",

language = "الإنجليزيّة",

volume = "35",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

AU - Krylov, Igor

AU - Pokroy, Boaz

AU - Ritter, Dan

AU - Eizenberg, Moshe

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The passivation of InGaAs by thin AlN layers allows a significant reduction of the interface state density compared to that of the widely used Al2O3/InGaAs structure. The influence of the AlN layer thickness on the interface electrical properties, as well as the role of the post-deposition annealing, was carefully examined. Ultrathin AlN layers (∼1 nm) provide high quality interfacial electrical properties after a mild anneal (400 °C). Thick AlN passivation layers require annealing at higher temperature (500 °C) to achieve low interface states density. Possible explanations of the observed trend are suggested.

AB - The passivation of InGaAs by thin AlN layers allows a significant reduction of the interface state density compared to that of the widely used Al2O3/InGaAs structure. The influence of the AlN layer thickness on the interface electrical properties, as well as the role of the post-deposition annealing, was carefully examined. Ultrathin AlN layers (∼1 nm) provide high quality interfacial electrical properties after a mild anneal (400 °C). Thick AlN passivation layers require annealing at higher temperature (500 °C) to achieve low interface states density. Possible explanations of the observed trend are suggested.

UR - http://www.scopus.com/inward/record.url?scp=85008675875&partnerID=8YFLogxK

U2 - 10.1116/1.4973300

DO - 10.1116/1.4973300

M3 - مقالة

SN - 2166-2746

VL - 35

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

IS - 1

M1 - 011205

ER -

Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

Abstract

All Science Journal Classification (ASJC) codes

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