Optimizing the Write Fidelity of MRAMs

Yongjune Kim, Yoocharn Jeon, Cyril Guyot, Yuval Cassuto

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for the large-scale deployment of MRAMs. In this paper, we formulate an optimization problem to maximize the memory fidelity given energy constraints, and propose a biconvex optimization approach to solve it. The basic idea is to allocate non-uniform write pulses depending on the importance of each bit position. We consider the mean squared error (MSE) as a fidelity metric and propose an iterative water-filling algorithm to minimize the MSE. Although the iterative algorithm does not guarantee the global optimality, we can choose a proper starting point that decreases the MSE exponentially and guarantees fast convergence. For an 8-bit accessed word, the proposed algorithm reduces the MSE by a factor of 21.

Original languageEnglish
Title of host publication2020 IEEE International Symposium on Information Theory, ISIT 2020 - Proceedings
Number of pages6
ISBN (Electronic)9781728164328
StatePublished - Jun 2020
Event2020 IEEE International Symposium on Information Theory, ISIT 2020 - Los Angeles, United States
Duration: 21 Jul 202026 Jul 2020

Publication series

NameIEEE International Symposium on Information Theory - Proceedings


Conference2020 IEEE International Symposium on Information Theory, ISIT 2020
Country/TerritoryUnited States
CityLos Angeles

All Science Journal Classification (ASJC) codes

  • Theoretical Computer Science
  • Information Systems
  • Modelling and Simulation
  • Applied Mathematics


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