Optimized tera-FET detector performance based on an analytical device model verified up to 9 THz

S. Boppel; A. Lisauskas; M. Bauer; M. Mundt; R. Venckevičius; L. Minkevičius; D. Seliuta; I. Kašalynas; B. Khamaisi; E. Socher; G. Valušis; V. Krozer; H. G. Roskos

doi:10.1109/IRMMW-THz.2013.6665574

Optimized tera-FET detector performance based on an analytical device model verified up to 9 THz

S. Boppel, A. Lisauskas, M. Bauer, M. Mundt, R. Venckevičius, L. Minkevičius, D. Seliuta, I. Kašalynas, B. Khamaisi, E. Socher, G. Valušis, V. Krozer, H. G. Roskos

School of Electrical Engineering

Tel Aviv University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.

Original language	English
Title of host publication	2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
DOIs	https://doi.org/10.1109/IRMMW-THz.2013.6665574
State	Published - 2013
Event	2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 - Mainz, Germany Duration: 1 Sep 2013 → 6 Sep 2013

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

Conference

Conference	2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
Country/Territory	Germany
City	Mainz
Period	1/09/13 → 6/09/13

All Science Journal Classification (ASJC) codes

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/IRMMW-THz.2013.6665574

Cite this

Boppel, S., Lisauskas, A., Bauer, M., Mundt, M., Venckevičius, R., Minkevičius, L., Seliuta, D., Kašalynas, I., Khamaisi, B., Socher, E., Valušis, G., Krozer, V., & Roskos, H. G. (2013). Optimized tera-FET detector performance based on an analytical device model verified up to 9 THz. In 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 Article 6665574 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). https://doi.org/10.1109/IRMMW-THz.2013.6665574

@inproceedings{b88841a011e84f9d94dfa46f19358339,

title = "Optimized tera-FET detector performance based on an analytical device model verified up to 9 THz",

abstract = "We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.",

author = "S. Boppel and A. Lisauskas and M. Bauer and M. Mundt and R. Venckevi{\v c}ius and L. Minkevi{\v c}ius and D. Seliuta and I. Ka{\v s}alynas and B. Khamaisi and E. Socher and G. Valu{\v s}is and V. Krozer and Roskos, \{H. G.\}",

year = "2013",

doi = "10.1109/IRMMW-THz.2013.6665574",

language = "الإنجليزيّة",

isbn = "9781467347174",

series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",

booktitle = "2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013",

note = "2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 ; Conference date: 01-09-2013 Through 06-09-2013",

}

Boppel, S, Lisauskas, A, Bauer, M, Mundt, M, Venckevičius, R, Minkevičius, L, Seliuta, D, Kašalynas, I, Khamaisi, B, Socher, E, Valušis, G, Krozer, V & Roskos, HG 2013, Optimized tera-FET detector performance based on an analytical device model verified up to 9 THz. in 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013., 6665574, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013, Mainz, Germany, 1/09/13. https://doi.org/10.1109/IRMMW-THz.2013.6665574

Optimized tera-FET detector performance based on an analytical device model verified up to 9 THz. / Boppel, S.; Lisauskas, A.; Bauer, M. et al.
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013. 2013. 6665574 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optimized tera-FET detector performance based on an analytical device model verified up to 9 THz

AU - Boppel, S.

AU - Lisauskas, A.

AU - Bauer, M.

AU - Mundt, M.

AU - Venckevičius, R.

AU - Minkevičius, L.

AU - Seliuta, D.

AU - Kašalynas, I.

AU - Khamaisi, B.

AU - Socher, E.

AU - Valušis, G.

AU - Krozer, V.

AU - Roskos, H. G.

PY - 2013

Y1 - 2013

N2 - We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.

AB - We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.

UR - http://www.scopus.com/inward/record.url?scp=84893381930&partnerID=8YFLogxK

U2 - 10.1109/IRMMW-THz.2013.6665574

DO - 10.1109/IRMMW-THz.2013.6665574

M3 - منشور من مؤتمر

SN - 9781467347174

T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

BT - 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013

T2 - 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013

Y2 - 1 September 2013 through 6 September 2013

ER -

Boppel S, Lisauskas A, Bauer M, Mundt M, Venckevičius R, Minkevičius L et al. Optimized tera-FET detector performance based on an analytical device model verified up to 9 THz. In 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013. 2013. 6665574. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). doi: 10.1109/IRMMW-THz.2013.6665574

Optimized tera-FET detector performance based on an analytical device model verified up to 9 THz

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