Optical properties of nonvolatile memory capacitors based on gold nanoparticles and SiO2-HfO2 sublayers

V. Mikhelashvili; B. Meyler; M. Garbrecht; S. Yofis; J. Salzman; T. Cohen-Hyams; W. D. Kaplan; Y. Roizin; M. Lisiansky; G. Eisenstein

doi:10.1063/1.3543620

Optical properties of nonvolatile memory capacitors based on gold nanoparticles and SiO₂-HfO₂ sublayers

V. Mikhelashvili, B. Meyler, M. Garbrecht, S. Yofis, J. Salzman, T. Cohen-Hyams, W. D. Kaplan, Y. Roizin, M. Lisiansky, G. Eisenstein

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

We describe the effect of optical excitation of state of the art nonvolatile memory capacitors. The devices comprise Au nanocrystals sandwiched between a SiO₂ tunneling layer and a HfO₂ blocking layer and exhibit an effective oxide thickness of 7.5 nm. The memory properties are modified by the optical excitation due to nonequilibrium depletion. Optical control with different illumination wavelengths as well as variable optical intensities and pulse widths is described.

Original language	English
Article number	022905
Journal	Applied Physics Letters
Volume	98
Issue number	2
DOIs	https://doi.org/10.1063/1.3543620
State	Published - 10 Jan 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3543620

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title = "Optical properties of nonvolatile memory capacitors based on gold nanoparticles and SiO2-HfO2 sublayers",

abstract = "We describe the effect of optical excitation of state of the art nonvolatile memory capacitors. The devices comprise Au nanocrystals sandwiched between a SiO2 tunneling layer and a HfO2 blocking layer and exhibit an effective oxide thickness of 7.5 nm. The memory properties are modified by the optical excitation due to nonequilibrium depletion. Optical control with different illumination wavelengths as well as variable optical intensities and pulse widths is described.",

author = "V. Mikhelashvili and B. Meyler and M. Garbrecht and S. Yofis and J. Salzman and T. Cohen-Hyams and Kaplan, {W. D.} and Y. Roizin and M. Lisiansky and G. Eisenstein",

note = "Funding Information: This work was supported by the project ALPHA of the Israeli Ministry of Trade and Industry.",

year = "2011",

month = jan,

day = "10",

doi = "10.1063/1.3543620",

language = "الإنجليزيّة",

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journal = "Applied Physics Letters",

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T1 - Optical properties of nonvolatile memory capacitors based on gold nanoparticles and SiO2-HfO2 sublayers

AU - Mikhelashvili, V.

AU - Meyler, B.

AU - Garbrecht, M.

AU - Yofis, S.

AU - Salzman, J.

AU - Cohen-Hyams, T.

AU - Kaplan, W. D.

AU - Roizin, Y.

AU - Lisiansky, M.

AU - Eisenstein, G.

N1 - Funding Information: This work was supported by the project ALPHA of the Israeli Ministry of Trade and Industry.

PY - 2011/1/10

Y1 - 2011/1/10

N2 - We describe the effect of optical excitation of state of the art nonvolatile memory capacitors. The devices comprise Au nanocrystals sandwiched between a SiO2 tunneling layer and a HfO2 blocking layer and exhibit an effective oxide thickness of 7.5 nm. The memory properties are modified by the optical excitation due to nonequilibrium depletion. Optical control with different illumination wavelengths as well as variable optical intensities and pulse widths is described.

AB - We describe the effect of optical excitation of state of the art nonvolatile memory capacitors. The devices comprise Au nanocrystals sandwiched between a SiO2 tunneling layer and a HfO2 blocking layer and exhibit an effective oxide thickness of 7.5 nm. The memory properties are modified by the optical excitation due to nonequilibrium depletion. Optical control with different illumination wavelengths as well as variable optical intensities and pulse widths is described.

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U2 - 10.1063/1.3543620

DO - 10.1063/1.3543620

M3 - مقالة

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022905

ER -

Optical properties of nonvolatile memory capacitors based on gold nanoparticles and SiO₂-HfO₂ sublayers

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All Science Journal Classification (ASJC) codes

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