Optical Multilevel Spin Bit Device Using Chiral Quantum Dots

H. Al-Bustami; B. P. Bloom; Amir Ziv; S. Goldring; S. Yochelis; R. Naaman; D. H. Waldeck; Y. Paltiel

doi:10.1021/acs.nanolett.0c03445

Optical Multilevel Spin Bit Device Using Chiral Quantum Dots

H. Al-Bustami, B. P. Bloom, Amir Ziv, S. Goldring, S. Yochelis, R. Naaman, D. H. Waldeck, Y. Paltiel

The Hebrew University of Jerusalem, Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

Abstract

The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor and a nine-state readout is achieved.

Original language	English
Pages (from-to)	8675-8681
Number of pages	7
Journal	Nano Letters
Volume	20
Issue number	12
Early online date	13 Nov 2020
DOIs	https://doi.org/10.1021/acs.nanolett.0c03445
State	Published - 9 Dec 2020

Keywords

chiral induced spin selectivity (CISS)
multistate memory
optical nano device
spin transfer
spintronics

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/acs.nanolett.0c03445

Cite this

@article{676f29dea9e3419bb629328b88e55c4e,

title = "Optical Multilevel Spin Bit Device Using Chiral Quantum Dots",

abstract = "The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor and a nine-state readout is achieved.",

keywords = "chiral induced spin selectivity (CISS), multistate memory, optical nano device, spin transfer, spintronics",

author = "H. Al-Bustami and Bloom, \{B. P.\} and Amir Ziv and S. Goldring and S. Yochelis and R. Naaman and Waldeck, \{D. H.\} and Y. Paltiel",

note = "Publisher Copyright: {\textcopyright} 2020 American Chemical Society.",

year = "2020",

month = dec,

day = "9",

doi = "10.1021/acs.nanolett.0c03445",

language = "الإنجليزيّة",

volume = "20",

pages = "8675--8681",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Optical Multilevel Spin Bit Device Using Chiral Quantum Dots

AU - Al-Bustami, H.

AU - Bloom, B. P.

AU - Ziv, Amir

AU - Goldring, S.

AU - Yochelis, S.

AU - Naaman, R.

AU - Waldeck, D. H.

AU - Paltiel, Y.

PY - 2020/12/9

Y1 - 2020/12/9

N2 - The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor and a nine-state readout is achieved.

AB - The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor and a nine-state readout is achieved.

KW - chiral induced spin selectivity (CISS)

KW - multistate memory

KW - optical nano device

KW - spin transfer

KW - spintronics

UR - http://www.scopus.com/inward/record.url?scp=85096594677&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.0c03445

DO - 10.1021/acs.nanolett.0c03445

M3 - مقالة

C2 - 33185449

SN - 1530-6984

VL - 20

SP - 8675

EP - 8681

JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

Optical Multilevel Spin Bit Device Using Chiral Quantum Dots

Abstract

Keywords

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this