@inproceedings{0d7e37f8360148518117c073643a5bec,
title = "Non-binary WOM-Codes for multilevel flash memories",
abstract = "A Write-Once Memory (WOM)-code is a coding scheme that allows information to be written in a memory block multiple times, but in a way that the stored values are not decreased across writes. This work studies non-binary WOM-codes with applications to flash memory. We present two constructions of non-binary WOM-codes that leverage existing high sum-rate WOM-codes defined over smaller alphabets. In many instances, these constructions provide the highest known sum-rates of the non-binary WOM-codes. In addition, we introduce a new class of codes, called level distance WOM-codes, which mitigate the difficulty of programming a flash memory cell by eliminating all small-magnitude level increases. We show how to construct such codes and state an upper bound on their sum-rate.",
author = "Ryan Gabrys and Eitan Yaakobi and Lara Dolecek and Siegel, {Paul H.} and Alexander Vardy and Wolf, {Jack K.}",
year = "2011",
doi = "10.1109/ITW.2011.6089490",
language = "الإنجليزيّة",
isbn = "9781457704376",
series = "2011 IEEE Information Theory Workshop, ITW 2011",
pages = "40--44",
booktitle = "2011 IEEE Information Theory Workshop, ITW 2011",
note = "2011 IEEE Information Theory Workshop, ITW 2011 ; Conference date: 16-10-2011 Through 20-10-2011",
}