Nanosession: Valence Change Memories - A Look Inside

Regina Dittmann; R. Muenstermann; I. Krug; D. Park; F. Kronast; A. Besmehn; J. Mayer; C. M. Schneider; Rainer Waser; Malgorzata Sowinska; Thomas Bertaud; Damian Walczyk; Sebastian Thiess; Christian Walczyk; Thomas Schroeder; Christian Lenser; Alexei Kuzmin; Aleksandr Kalinko; Juris Purans; Regina Dittmann; C. Moreno; J. Zabaleta; A. Palau; J. Gázquez; N. Mestres; T. Puig; C. Ocal; X. Obradors; Pablo Levy; N. Ghenzi1; M. J. Sanchez; M. J. Rozenberg; P. Stoliar; F. G. Marlasca; D. Rubi; Sabina Spiga; Stefano Brivio; Grazia Tallarida; Daniele Perego; Silvia Franz; Damien Deleruyelle; Christophe Muller; Eilam Yalon; Shimon Cohen; Arkadi Gavrilov; Boris Meyler; Joseph Salzman; Dan Ritter

doi:10.1002/9783527667703.ch44

Nanosession: Valence Change Memories - A Look Inside

Regina Dittmann, R. Muenstermann, I. Krug, D. Park, F. Kronast, A. Besmehn, J. Mayer, C. M. Schneider, Rainer Waser, Malgorzata Sowinska, Thomas Bertaud, Damian Walczyk, Sebastian Thiess, Christian Walczyk, Thomas Schroeder, Christian Lenser, Alexei Kuzmin, Aleksandr Kalinko, Juris Purans, Regina DittmannC. Moreno, J. Zabaleta, A. Palau, J. Gázquez, N. Mestres, T. Puig, C. Ocal, X. Obradors, Pablo Levy, N. Ghenzi1, M. J. Sanchez, M. J. Rozenberg, P. Stoliar, F. G. Marlasca, D. Rubi, Sabina Spiga, Stefano Brivio, Grazia Tallarida, Daniele Perego, Silvia Franz, Damien Deleruyelle, Christophe Muller, Eilam Yalon, Shimon Cohen, Arkadi Gavrilov, Boris Meyler, Joseph Salzman, Dan Ritter

Technion - Israel Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

Summary This chapter examines the nanoscale current distribution in single crystalline Fe:doped SrTiO3 (STO) thin films devices and linked it to chemical and microstructural changes in detail. It also examines in-operando hard X-ray photoelectron spectroscopy (HAXPES) studies of the resistive switching (RS) phenomenon observed in Ti/HfO2-based systems. The chapter presents the distribution of oxygen vacancies in a switched memristor fabricated from epitaxial Fe-doped STO by spatially resolved x-ray absorption near-edge structure (XANES). It focuses on the interfacial microstructure and the magnetic, transport and nanoscale switching phenomena of La1-xSrxMnO3 (LSMO) films grown by chemical solution deposition (CSD) on SrTiO3 (STO) and LaAlO3 (LAO) single crystalline substrates. The chapter explores different resistance states of metal (Ag, Ti) - manganite(La0.325Pr0.300Ca0.375MnO3) interfaces as prototypes for non-volatile memristive memory devices. RS materials are among the most promising candidates for next-generation nonvolatile memory technology. Controlled Vocabulary Terms integrated memory circuits; photoelectron spectroscopy; random-access storage; thin film devices

Original language	English
Title of host publication	Frontiers in Electronic Materials
Pages	233-245
Number of pages	13
DOIs	https://doi.org/10.1002/9783527667703.ch44
State	Published - 2012

Keywords

Fe-doped SrTiO3 (STO) thin films devices
La1-xSrxMnO3 (LSMO) films
Ti/HfO2-based systems
hard X-ray photoelectron spectroscopy (HAXPES)
manganite(La0.325Pr0.300Ca0.375MnO3) interface
memristive memory devices

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10.1002/9783527667703.ch44

https://onlinelibrary.wiley.com/doi/abs/10.1002/9783527667703.ch44

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Dittmann, R., Muenstermann, R., Krug, I., Park, D., Kronast, F., Besmehn, A., Mayer, J., Schneider, C. M., Waser, R., Sowinska, M., Bertaud, T., Walczyk, D., Thiess, S., Walczyk, C., Schroeder, T., Lenser, C., Kuzmin, A., Kalinko, A., Purans, J., ... Ritter, D. (2012). Nanosession: Valence Change Memories - A Look Inside. In Frontiers in Electronic Materials (pp. 233-245) https://doi.org/10.1002/9783527667703.ch44

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title = "Nanosession: Valence Change Memories - A Look Inside",

abstract = "Summary This chapter examines the nanoscale current distribution in single crystalline Fe:doped SrTiO3 (STO) thin films devices and linked it to chemical and microstructural changes in detail. It also examines in-operando hard X-ray photoelectron spectroscopy (HAXPES) studies of the resistive switching (RS) phenomenon observed in Ti/HfO2-based systems. The chapter presents the distribution of oxygen vacancies in a switched memristor fabricated from epitaxial Fe-doped STO by spatially resolved x-ray absorption near-edge structure (XANES). It focuses on the interfacial microstructure and the magnetic, transport and nanoscale switching phenomena of La1-xSrxMnO3 (LSMO) films grown by chemical solution deposition (CSD) on SrTiO3 (STO) and LaAlO3 (LAO) single crystalline substrates. The chapter explores different resistance states of metal (Ag, Ti) - manganite(La0.325Pr0.300Ca0.375MnO3) interfaces as prototypes for non-volatile memristive memory devices. RS materials are among the most promising candidates for next-generation nonvolatile memory technology. Controlled Vocabulary Terms integrated memory circuits; photoelectron spectroscopy; random-access storage; thin film devices",

keywords = "Fe-doped SrTiO3 (STO) thin films devices, La1-xSrxMnO3 (LSMO) films, Ti/HfO2-based systems, hard X-ray photoelectron spectroscopy (HAXPES), manganite(La0.325Pr0.300Ca0.375MnO3) interface, memristive memory devices",

author = "Regina Dittmann and R. Muenstermann and I. Krug and D. Park and F. Kronast and A. Besmehn and J. Mayer and Schneider, {C. M.} and Rainer Waser and Malgorzata Sowinska and Thomas Bertaud and Damian Walczyk and Sebastian Thiess and Christian Walczyk and Thomas Schroeder and Christian Lenser and Alexei Kuzmin and Aleksandr Kalinko and Juris Purans and Regina Dittmann and C. Moreno and J. Zabaleta and A. Palau and J. G{\'a}zquez and N. Mestres and T. Puig and C. Ocal and X. Obradors and Pablo Levy and N. Ghenzi1 and Sanchez, {M. J.} and Rozenberg, {M. J.} and P. Stoliar and Marlasca, {F. G.} and D. Rubi and Sabina Spiga and Stefano Brivio and Grazia Tallarida and Daniele Perego and Silvia Franz and Damien Deleruyelle and Christophe Muller and Eilam Yalon and Shimon Cohen and Arkadi Gavrilov and Boris Meyler and Joseph Salzman and Dan Ritter",

year = "2012",

doi = "10.1002/9783527667703.ch44",

language = "الإنجليزيّة",

isbn = "9783527667703",

pages = "233--245",

booktitle = "Frontiers in Electronic Materials",

}

Dittmann, R, Muenstermann, R, Krug, I, Park, D, Kronast, F, Besmehn, A, Mayer, J, Schneider, CM, Waser, R, Sowinska, M, Bertaud, T, Walczyk, D, Thiess, S, Walczyk, C, Schroeder, T, Lenser, C, Kuzmin, A, Kalinko, A, Purans, J, Dittmann, R, Moreno, C, Zabaleta, J, Palau, A, Gázquez, J, Mestres, N, Puig, T, Ocal, C, Obradors, X, Levy, P, Ghenzi1, N, Sanchez, MJ, Rozenberg, MJ, Stoliar, P, Marlasca, FG, Rubi, D, Spiga, S, Brivio, S, Tallarida, G, Perego, D, Franz, S, Deleruyelle, D, Muller, C, Yalon, E, Cohen, S, Gavrilov, A, Meyler, B, Salzman, J & Ritter, D 2012, Nanosession: Valence Change Memories - A Look Inside. in Frontiers in Electronic Materials. pp. 233-245. https://doi.org/10.1002/9783527667703.ch44

TY - CHAP

T1 - Nanosession: Valence Change Memories - A Look Inside

AU - Dittmann, Regina

AU - Muenstermann, R.

AU - Krug, I.

AU - Park, D.

AU - Kronast, F.

AU - Besmehn, A.

AU - Mayer, J.

AU - Schneider, C. M.

AU - Waser, Rainer

AU - Sowinska, Malgorzata

AU - Bertaud, Thomas

AU - Walczyk, Damian

AU - Thiess, Sebastian

AU - Walczyk, Christian

AU - Schroeder, Thomas

AU - Lenser, Christian

AU - Kuzmin, Alexei

AU - Kalinko, Aleksandr

AU - Purans, Juris

AU - Dittmann, Regina

AU - Moreno, C.

AU - Zabaleta, J.

AU - Palau, A.

AU - Gázquez, J.

AU - Mestres, N.

AU - Puig, T.

AU - Ocal, C.

AU - Obradors, X.

AU - Levy, Pablo

AU - Ghenzi1, N.

AU - Sanchez, M. J.

AU - Rozenberg, M. J.

AU - Stoliar, P.

AU - Marlasca, F. G.

AU - Rubi, D.

AU - Spiga, Sabina

AU - Brivio, Stefano

AU - Tallarida, Grazia

AU - Perego, Daniele

AU - Franz, Silvia

AU - Deleruyelle, Damien

AU - Muller, Christophe

AU - Yalon, Eilam

AU - Cohen, Shimon

AU - Gavrilov, Arkadi

AU - Meyler, Boris

AU - Salzman, Joseph

AU - Ritter, Dan

PY - 2012

Y1 - 2012

N2 - Summary This chapter examines the nanoscale current distribution in single crystalline Fe:doped SrTiO3 (STO) thin films devices and linked it to chemical and microstructural changes in detail. It also examines in-operando hard X-ray photoelectron spectroscopy (HAXPES) studies of the resistive switching (RS) phenomenon observed in Ti/HfO2-based systems. The chapter presents the distribution of oxygen vacancies in a switched memristor fabricated from epitaxial Fe-doped STO by spatially resolved x-ray absorption near-edge structure (XANES). It focuses on the interfacial microstructure and the magnetic, transport and nanoscale switching phenomena of La1-xSrxMnO3 (LSMO) films grown by chemical solution deposition (CSD) on SrTiO3 (STO) and LaAlO3 (LAO) single crystalline substrates. The chapter explores different resistance states of metal (Ag, Ti) - manganite(La0.325Pr0.300Ca0.375MnO3) interfaces as prototypes for non-volatile memristive memory devices. RS materials are among the most promising candidates for next-generation nonvolatile memory technology. Controlled Vocabulary Terms integrated memory circuits; photoelectron spectroscopy; random-access storage; thin film devices

AB - Summary This chapter examines the nanoscale current distribution in single crystalline Fe:doped SrTiO3 (STO) thin films devices and linked it to chemical and microstructural changes in detail. It also examines in-operando hard X-ray photoelectron spectroscopy (HAXPES) studies of the resistive switching (RS) phenomenon observed in Ti/HfO2-based systems. The chapter presents the distribution of oxygen vacancies in a switched memristor fabricated from epitaxial Fe-doped STO by spatially resolved x-ray absorption near-edge structure (XANES). It focuses on the interfacial microstructure and the magnetic, transport and nanoscale switching phenomena of La1-xSrxMnO3 (LSMO) films grown by chemical solution deposition (CSD) on SrTiO3 (STO) and LaAlO3 (LAO) single crystalline substrates. The chapter explores different resistance states of metal (Ag, Ti) - manganite(La0.325Pr0.300Ca0.375MnO3) interfaces as prototypes for non-volatile memristive memory devices. RS materials are among the most promising candidates for next-generation nonvolatile memory technology. Controlled Vocabulary Terms integrated memory circuits; photoelectron spectroscopy; random-access storage; thin film devices

KW - Fe-doped SrTiO3 (STO) thin films devices

KW - La1-xSrxMnO3 (LSMO) films

KW - Ti/HfO2-based systems

KW - hard X-ray photoelectron spectroscopy (HAXPES)

KW - manganite(La0.325Pr0.300Ca0.375MnO3) interface

KW - memristive memory devices

U2 - 10.1002/9783527667703.ch44

DO - 10.1002/9783527667703.ch44

M3 - فصل

SN - 9783527667703

SP - 233

EP - 245

BT - Frontiers in Electronic Materials

ER -

Nanosession: Valence Change Memories - A Look Inside

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