Nanoscale High-Tc YBCO/GaN Super-Schottky Diode

Dmitry Panna; Krishna Balasubramanian; Shlomi Bouscher; Yujia Wang; Pu Yu; Xi Chen; Alex Hayat

doi:10.1038/s41598-018-23882-6

Nanoscale High-Tc YBCO/GaN Super-Schottky Diode

Dmitry Panna, Krishna Balasubramanian, Shlomi Bouscher, Yujia Wang, Pu Yu, Xi Chen, Alex Hayat

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate a high-temperature nanoscale super-Schottky diode based on a superconducting tunnel junction of pulsed-laser-deposited YBCO on GaN thin films. A buffer-free direct growth of nanoscale YBCO thin films on heavily doped GaN was performed to realize a direct high-T_c superconductor-semiconductor junction. The junction shows strongly non-linear I-V characteristics, which have practical applications as a low-voltage super-Schottky diode for microwave mixing and detection. The V-shaped differential conductance spectra observed across the junction are characteristic of the c-axis tunneling into a cuprate superconductor with a certain disorder level. This implementation of the super-Schottky diode, supported by the buffer-free direct growth of nanoscale high-T_c thin films on semiconductors, paves the way for practical large-scale fabrication and integration of high-T_c-superconductor devices in future technologies.

Original language	English
Article number	5597
Journal	Scientific Reports
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41598-018-23882-6
State	Published - 1 Dec 2018

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10.1038/s41598-018-23882-6

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title = "Nanoscale High-Tc YBCO/GaN Super-Schottky Diode",

abstract = "We demonstrate a high-temperature nanoscale super-Schottky diode based on a superconducting tunnel junction of pulsed-laser-deposited YBCO on GaN thin films. A buffer-free direct growth of nanoscale YBCO thin films on heavily doped GaN was performed to realize a direct high-Tc superconductor-semiconductor junction. The junction shows strongly non-linear I-V characteristics, which have practical applications as a low-voltage super-Schottky diode for microwave mixing and detection. The V-shaped differential conductance spectra observed across the junction are characteristic of the c-axis tunneling into a cuprate superconductor with a certain disorder level. This implementation of the super-Schottky diode, supported by the buffer-free direct growth of nanoscale high-Tc thin films on semiconductors, paves the way for practical large-scale fabrication and integration of high-Tc-superconductor devices in future technologies.",

author = "Dmitry Panna and Krishna Balasubramanian and Shlomi Bouscher and Yujia Wang and Pu Yu and Xi Chen and Alex Hayat",

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doi = "10.1038/s41598-018-23882-6",

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T1 - Nanoscale High-Tc YBCO/GaN Super-Schottky Diode

AU - Panna, Dmitry

AU - Balasubramanian, Krishna

AU - Bouscher, Shlomi

AU - Wang, Yujia

AU - Yu, Pu

AU - Chen, Xi

AU - Hayat, Alex

PY - 2018/12/1

Y1 - 2018/12/1

N2 - We demonstrate a high-temperature nanoscale super-Schottky diode based on a superconducting tunnel junction of pulsed-laser-deposited YBCO on GaN thin films. A buffer-free direct growth of nanoscale YBCO thin films on heavily doped GaN was performed to realize a direct high-Tc superconductor-semiconductor junction. The junction shows strongly non-linear I-V characteristics, which have practical applications as a low-voltage super-Schottky diode for microwave mixing and detection. The V-shaped differential conductance spectra observed across the junction are characteristic of the c-axis tunneling into a cuprate superconductor with a certain disorder level. This implementation of the super-Schottky diode, supported by the buffer-free direct growth of nanoscale high-Tc thin films on semiconductors, paves the way for practical large-scale fabrication and integration of high-Tc-superconductor devices in future technologies.

AB - We demonstrate a high-temperature nanoscale super-Schottky diode based on a superconducting tunnel junction of pulsed-laser-deposited YBCO on GaN thin films. A buffer-free direct growth of nanoscale YBCO thin films on heavily doped GaN was performed to realize a direct high-Tc superconductor-semiconductor junction. The junction shows strongly non-linear I-V characteristics, which have practical applications as a low-voltage super-Schottky diode for microwave mixing and detection. The V-shaped differential conductance spectra observed across the junction are characteristic of the c-axis tunneling into a cuprate superconductor with a certain disorder level. This implementation of the super-Schottky diode, supported by the buffer-free direct growth of nanoscale high-Tc thin films on semiconductors, paves the way for practical large-scale fabrication and integration of high-Tc-superconductor devices in future technologies.

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U2 - 10.1038/s41598-018-23882-6

DO - 10.1038/s41598-018-23882-6

M3 - مقالة

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VL - 8

JO - Scientific Reports

JF - Scientific Reports

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M1 - 5597

ER -

Nanoscale High-Tc YBCO/GaN Super-Schottky Diode

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