Multilayer photonic logic gate integrated into microelectronic chip

Amihai Meiri, Shai Tzur, Yosi Cohen, Ori Bass, Alexander Fish, Zeev Zalevsky

Research output: Contribution to journalArticlepeer-review


An all-optical XOR gate was designed to take advantage of the previously unused silicon dioxide (SiO2) interconnect layers in a microelectronic chip. The device relies on the coupling of modes between parallel waveguides and the interaction of the modes with the metal interconnects of a silicon chip to obtain a phase difference between input arms. When the signals from the two input arms interfere, the result is a logic XOR operation due to the phase difference. The design was numerically implemented, and a contrast of 18.7 dB was obtained with a 13.2-μm-long logic gate.

Original languageEnglish
Article number061607
JournalJournal of Nanophotonics
Issue number1
StatePublished - 1 Jan 2012


  • all optical devices
  • integrated optics
  • logic gates
  • photonics
  • silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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