Minority carrier recombination of ordered Ga0.51In0.49P at high temperatures

R. Dagan; Y. Rosenwaks; A. Kribus; A. W. Walker; J. Ohlmann; F. Dimroth

doi:https://doi.org/10.1063/1.4971282

Minority carrier recombination of ordered Ga_0.51In_0.49P at high temperatures

R. Dagan, Y. Rosenwaks, A. Kribus, A. W. Walker, J. Ohlmann, F. Dimroth

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

The minority carrier lifetime of high-quality ordered GaInP lattice matched to GaAs and the surface recombination velocity at its interface to AlInP were measured using time-resolved photo-luminescence in the temperature range of 77-500 K. The surface recombination velocity was found to be relatively low (under 500 cm/s) over the measured temperature range. The effective lifetime increased with a temperature up to around 300 K, and then decreased in the 300-500 K range. The variations in the effective lifetime, caused by the variations in the bulk lifetime, are explained by considering the separate contributions of radiative and non-radiative recombination and their respective temperature dependencies.

Original language	English
Article number	222106
Journal	Applied Physics Letters
Volume	109
Issue number	22
DOIs	https://doi.org/10.1063/1.4971282
State	Published - 28 Nov 2016

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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https://doi.org/10.1063/1.4971282

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title = "Minority carrier recombination of ordered Ga0.51In0.49P at high temperatures",

abstract = "The minority carrier lifetime of high-quality ordered GaInP lattice matched to GaAs and the surface recombination velocity at its interface to AlInP were measured using time-resolved photo-luminescence in the temperature range of 77-500 K. The surface recombination velocity was found to be relatively low (under 500 cm/s) over the measured temperature range. The effective lifetime increased with a temperature up to around 300 K, and then decreased in the 300-500 K range. The variations in the effective lifetime, caused by the variations in the bulk lifetime, are explained by considering the separate contributions of radiative and non-radiative recombination and their respective temperature dependencies.",

author = "R. Dagan and Y. Rosenwaks and A. Kribus and Walker, {A. W.} and J. Ohlmann and F. Dimroth",

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T1 - Minority carrier recombination of ordered Ga0.51In0.49P at high temperatures

AU - Dagan, R.

AU - Rosenwaks, Y.

AU - Kribus, A.

AU - Walker, A. W.

AU - Ohlmann, J.

AU - Dimroth, F.

PY - 2016/11/28

Y1 - 2016/11/28

N2 - The minority carrier lifetime of high-quality ordered GaInP lattice matched to GaAs and the surface recombination velocity at its interface to AlInP were measured using time-resolved photo-luminescence in the temperature range of 77-500 K. The surface recombination velocity was found to be relatively low (under 500 cm/s) over the measured temperature range. The effective lifetime increased with a temperature up to around 300 K, and then decreased in the 300-500 K range. The variations in the effective lifetime, caused by the variations in the bulk lifetime, are explained by considering the separate contributions of radiative and non-radiative recombination and their respective temperature dependencies.

AB - The minority carrier lifetime of high-quality ordered GaInP lattice matched to GaAs and the surface recombination velocity at its interface to AlInP were measured using time-resolved photo-luminescence in the temperature range of 77-500 K. The surface recombination velocity was found to be relatively low (under 500 cm/s) over the measured temperature range. The effective lifetime increased with a temperature up to around 300 K, and then decreased in the 300-500 K range. The variations in the effective lifetime, caused by the variations in the bulk lifetime, are explained by considering the separate contributions of radiative and non-radiative recombination and their respective temperature dependencies.

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DO - https://doi.org/10.1063/1.4971282

M3 - مقالة

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222106

ER -

Minority carrier recombination of ordered Ga_0.51In_0.49P at high temperatures

Abstract

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