@inproceedings{bdf680bd62dd4d4d844449d232b2f02d,
title = "Metal-insulator-semiconductor bipolar transistor as a 4F2 vertical RRAM selection device",
abstract = "The metal-insulator-semiconductor bipolar transistor detects the injection of minority carriers through a resistive switching element into a semiconductor electrode. We propose that this device may serve as a selection device for bipolar resistive switching elements in large memory crossbar arrays. The selection is accomplished by inspection of the highly non-linear minority carrier current. The experimental device provides non-linearity of about ∼80 mV/decade, but 60 mV/decade is feasible. The device may potentially be confined into the minimal 4F2 footprint. The selection properties of the device are discussed, and compared to those of alternative selection devices suitable for bipolar switching elements.",
keywords = "bipolar transistor, crossbar array, resistive random access memory (RRAM), resistive switching, selection device",
author = "E. Yalon and D. Ritter",
year = "2012",
doi = "https://doi.org/10.1109/NVMTS.2013.6632852",
language = "الإنجليزيّة",
isbn = "9781467328487",
series = "2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, NVMTS 2012",
pages = "16--18",
booktitle = "2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, NVMTS 2012",
note = "2012 12th Annual Non-Volatile Memory Technology Symposium, NVMTS 2012 ; Conference date: 31-10-2012 Through 02-11-2012",
}