MBE growth of self-assisted InAs nanowires on graphene

Jung-Hyun Kang; Yuval Ronen; Yonatan Cohen; Domenica Convertino; Antonio Rossi; Camilla Coletti; Stefan Heun; Lucia Sorba; Perla Kacman; Hadas Shtrikman

doi:10.1088/0268-1242/31/11/115005

MBE growth of self-assisted InAs nanowires on graphene

Jung-Hyun Kang, Yuval Ronen, Yonatan Cohen, Domenica Convertino, Antonio Rossi, Camilla Coletti, Stefan Heun, Lucia Sorba, Perla Kacman, Hadas Shtrikman

Department of Condensed Matter Physics

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

Abstract

Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ∼50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, multiple Andreev reflections were observed, and an inelastic scattering length of about 900 nm was derived.

Original language	English
Article number	115005
Journal	Semiconductor Science and Technology
Volume	31
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/31/11/115005
State	Published - 27 Sep 2016

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1088/0268-1242/31/11/115005

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title = "MBE growth of self-assisted InAs nanowires on graphene",

abstract = "Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ∼50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, multiple Andreev reflections were observed, and an inelastic scattering length of about 900 nm was derived.",

author = "Jung-Hyun Kang and Yuval Ronen and Yonatan Cohen and Domenica Convertino and Antonio Rossi and Camilla Coletti and Stefan Heun and Lucia Sorba and Perla Kacman and Hadas Shtrikman",

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T1 - MBE growth of self-assisted InAs nanowires on graphene

AU - Kang, Jung-Hyun

AU - Ronen, Yuval

AU - Cohen, Yonatan

AU - Convertino, Domenica

AU - Rossi, Antonio

AU - Coletti, Camilla

AU - Heun, Stefan

AU - Sorba, Lucia

AU - Kacman, Perla

AU - Shtrikman, Hadas

PY - 2016/9/27

Y1 - 2016/9/27

N2 - Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ∼50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, multiple Andreev reflections were observed, and an inelastic scattering length of about 900 nm was derived.

AB - Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ∼50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, multiple Andreev reflections were observed, and an inelastic scattering length of about 900 nm was derived.

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U2 - 10.1088/0268-1242/31/11/115005

DO - 10.1088/0268-1242/31/11/115005

M3 - مقالة

SN - 0268-1242

VL - 31

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

M1 - 115005

ER -

MBE growth of self-assisted InAs nanowires on graphene

Abstract

All Science Journal Classification (ASJC) codes

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