Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

Anupama Yadav, Elena Flitsiyan, Leonid Chernyak, Ya Hsi Hwang, Yueh Ling Hsieh, Lei Lei, Fan Ren, Stephen J. Pearton, Igor Lubomirsky

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

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Engineering & Materials Science

Chemistry

Physics & Astronomy