Abstract
This paper presents a theoretical and experimental study of a locally induced microwave-heating effect implemented by a low-power transistor-based microwave drill. A coupled thermal-electromagnetic model shows that the thermal-runaway instability can be excited also by relatively low microwave power, in the range ∼10-100W, hence by solid-state sources rather than magnetrons. Local melting then occurs in a millimeter scale within seconds in various materials, such as glass, ceramics, basalts, and plastics. The experimental device employs an LDMOS transistor in an oscillator scheme, feeding a miniature microwave-drill applicator. The experimental results verify the rapid heating effect, similarly to the theoretical model. These findings may lead to various material-processing applications of local microwave heating implemented by solid-state devices, including local melting (for surface treatments, chemical reactions, joining, etc.), delicate drilling (e.g., of bones in orthopedic operations), local evaporation, ignition, and plasma ejection (e.g., in microwave-induced breakdown spectroscopy (MIBS) for material identification).
| Original language | English |
|---|---|
| Article number | 6214998 |
| Pages (from-to) | 2665-2672 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 60 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2012 |
Keywords
- Hotspots
- laterally diffused metal-oxide semiconductor field-effect tranLDMOS-FET
- microwave drills
- microwave heating
- thermal-runaway instabilities
All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering
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