Light emission rate enhancement from InP MQW by plasmon nano-antenna arrays

David Arbel; Nikolai Berkovitch; Amir Nevet; Andrea Peer; Shimon Cohen; Dan Ritter; Meir Orenstein

doi:https://doi.org/10.1364/OE.19.009807

Light emission rate enhancement from InP MQW by plasmon nano-antenna arrays

David Arbel, Nikolai Berkovitch, Amir Nevet, Andrea Peer, Shimon Cohen, Dan Ritter, Meir Orenstein

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Arrays of gold single-strip and double-strip nano-antennas, with resonance in the wavelength range of 1200-1600nm, were fabricated on the top of InGaAs/InP multi quantum well structure. Photo-luminescence from the quantum-wells was measured and shown to be enhanced by a factor of up to 9, with maximum enhancement wavelength corresponding to the nano-antennas resonance. Emission enhancement is attributed to the coupling of emitting charge-carriers to the plasmonic nano-antennas, causing an estimated increase in the radiative recombination rate by a factor of ∼25, thus making it dominant over non-radiative recombination. This effect will enable fast modulation of InP-based nano-emitters spontaneously emitting at telecom-wavelength.

Original language	English
Pages (from-to)	9807-9813
Number of pages	7
Journal	Optics Express
Volume	19
Issue number	10
DOIs	https://doi.org/10.1364/OE.19.009807 https://doi.org/10.1364/OE.19.009807
State	Published - 9 May 2011

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

Access to Document

Cite this

@article{9e66dcd62a084786b777ba582b9c07e0,

title = "Light emission rate enhancement from InP MQW by plasmon nano-antenna arrays",

abstract = "Arrays of gold single-strip and double-strip nano-antennas, with resonance in the wavelength range of 1200-1600nm, were fabricated on the top of InGaAs/InP multi quantum well structure. Photo-luminescence from the quantum-wells was measured and shown to be enhanced by a factor of up to 9, with maximum enhancement wavelength corresponding to the nano-antennas resonance. Emission enhancement is attributed to the coupling of emitting charge-carriers to the plasmonic nano-antennas, causing an estimated increase in the radiative recombination rate by a factor of ∼25, thus making it dominant over non-radiative recombination. This effect will enable fast modulation of InP-based nano-emitters spontaneously emitting at telecom-wavelength.",

author = "David Arbel and Nikolai Berkovitch and Amir Nevet and Andrea Peer and Shimon Cohen and Dan Ritter and Meir Orenstein",

note = "{\textcopyright} 2011 Optical Society of America",

year = "2011",

month = may,

day = "9",

doi = "https://doi.org/10.1364/OE.19.009807",

language = "الإنجليزيّة",

volume = "19",

pages = "9807--9813",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "10",

}

TY - JOUR

T1 - Light emission rate enhancement from InP MQW by plasmon nano-antenna arrays

AU - Arbel, David

AU - Berkovitch, Nikolai

AU - Nevet, Amir

AU - Peer, Andrea

AU - Cohen, Shimon

AU - Ritter, Dan

AU - Orenstein, Meir

PY - 2011/5/9

Y1 - 2011/5/9

N2 - Arrays of gold single-strip and double-strip nano-antennas, with resonance in the wavelength range of 1200-1600nm, were fabricated on the top of InGaAs/InP multi quantum well structure. Photo-luminescence from the quantum-wells was measured and shown to be enhanced by a factor of up to 9, with maximum enhancement wavelength corresponding to the nano-antennas resonance. Emission enhancement is attributed to the coupling of emitting charge-carriers to the plasmonic nano-antennas, causing an estimated increase in the radiative recombination rate by a factor of ∼25, thus making it dominant over non-radiative recombination. This effect will enable fast modulation of InP-based nano-emitters spontaneously emitting at telecom-wavelength.

AB - Arrays of gold single-strip and double-strip nano-antennas, with resonance in the wavelength range of 1200-1600nm, were fabricated on the top of InGaAs/InP multi quantum well structure. Photo-luminescence from the quantum-wells was measured and shown to be enhanced by a factor of up to 9, with maximum enhancement wavelength corresponding to the nano-antennas resonance. Emission enhancement is attributed to the coupling of emitting charge-carriers to the plasmonic nano-antennas, causing an estimated increase in the radiative recombination rate by a factor of ∼25, thus making it dominant over non-radiative recombination. This effect will enable fast modulation of InP-based nano-emitters spontaneously emitting at telecom-wavelength.

UR - http://www.scopus.com/inward/record.url?scp=79955824061&partnerID=8YFLogxK

U2 - https://doi.org/10.1364/OE.19.009807

DO - https://doi.org/10.1364/OE.19.009807

M3 - مقالة

C2 - 21643237

SN - 1094-4087

VL - 19

SP - 9807

EP - 9813

JO - Optics Express

JF - Optics Express

IS - 10

ER -

Light emission rate enhancement from InP MQW by plasmon nano-antenna arrays

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this