Large-Gap Quantum Spin Hall Insulators in Tin Films

Yong Xu, Binghai Yan, Hai-Jun Zhang, Jing Wang, Gang Xu, Peizhe Tang, Wenhui Duan, Shou-Cheng Zhang

Research output: Contribution to journalArticlepeer-review

Abstract

The search for large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Gamma point, similar to the case of a HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.
Original languageEnglish
Article number136804
Number of pages5
JournalPhysical review letters
Volume111
Issue number13
DOIs
StatePublished - Sep 2013

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