Investigation of the band offsets caused by thin Al 2O 3 layers in HfO 2 based Si metal oxide semiconductor devices

Lior Kornblum; Boris Meyler; Catherine Cytermann; Svetlana Yofis; Joseph Salzman; Moshe Eizenberg

doi:10.1063/1.3684939

Investigation of the band offsets caused by thin Al ₂O ₃ layers in HfO ₂ based Si metal oxide semiconductor devices

Lior Kornblum, Boris Meyler, Catherine Cytermann, Svetlana Yofis, Joseph Salzman, Moshe Eizenberg

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Ultrathin dielectric capping layers are a prominent route for threshold voltage control in advanced Si devices. In this work the position of an Al ₂O ₃ layer inside a HfO ₂-based stack is systematically varied and investigated following a low and a high temperature anneal. Electrical results are compared with a sub-nanometer resolution materials characterization, showing a diffusion of Al to the bottom HfO ₂ interface. A correlation is found between the presence of Al at the bottom interface and a flatband voltage increase. Based on these findings, we propose to use the position of the Al ₂O ₃ for fine-tuning the threshold voltage.

Original language	English
Article number	062907
Journal	Applied Physics Letters
Volume	100
Issue number	6
DOIs	https://doi.org/10.1063/1.3684939
State	Published - 6 Feb 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3684939

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title = "Investigation of the band offsets caused by thin Al 2O 3 layers in HfO 2 based Si metal oxide semiconductor devices",

abstract = "Ultrathin dielectric capping layers are a prominent route for threshold voltage control in advanced Si devices. In this work the position of an Al 2O 3 layer inside a HfO 2-based stack is systematically varied and investigated following a low and a high temperature anneal. Electrical results are compared with a sub-nanometer resolution materials characterization, showing a diffusion of Al to the bottom HfO 2 interface. A correlation is found between the presence of Al at the bottom interface and a flatband voltage increase. Based on these findings, we propose to use the position of the Al 2O 3 for fine-tuning the threshold voltage.",

author = "Lior Kornblum and Boris Meyler and Catherine Cytermann and Svetlana Yofis and Joseph Salzman and Moshe Eizenberg",

note = "Funding Information: This work was supported by the ALPHA consortium of the Israeli Ministry of Industry, Trade and Labor and by the Russell Berrie Nanotechnology Institute at the Technion. The authors thank Dr. T. Cohen-Hyams for her assistance and expertise with TEM sample preparation.",

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doi = "10.1063/1.3684939",

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T1 - Investigation of the band offsets caused by thin Al 2O 3 layers in HfO 2 based Si metal oxide semiconductor devices

AU - Kornblum, Lior

AU - Meyler, Boris

AU - Cytermann, Catherine

AU - Yofis, Svetlana

AU - Salzman, Joseph

AU - Eizenberg, Moshe

N1 - Funding Information: This work was supported by the ALPHA consortium of the Israeli Ministry of Industry, Trade and Labor and by the Russell Berrie Nanotechnology Institute at the Technion. The authors thank Dr. T. Cohen-Hyams for her assistance and expertise with TEM sample preparation.

PY - 2012/2/6

Y1 - 2012/2/6

N2 - Ultrathin dielectric capping layers are a prominent route for threshold voltage control in advanced Si devices. In this work the position of an Al 2O 3 layer inside a HfO 2-based stack is systematically varied and investigated following a low and a high temperature anneal. Electrical results are compared with a sub-nanometer resolution materials characterization, showing a diffusion of Al to the bottom HfO 2 interface. A correlation is found between the presence of Al at the bottom interface and a flatband voltage increase. Based on these findings, we propose to use the position of the Al 2O 3 for fine-tuning the threshold voltage.

AB - Ultrathin dielectric capping layers are a prominent route for threshold voltage control in advanced Si devices. In this work the position of an Al 2O 3 layer inside a HfO 2-based stack is systematically varied and investigated following a low and a high temperature anneal. Electrical results are compared with a sub-nanometer resolution materials characterization, showing a diffusion of Al to the bottom HfO 2 interface. A correlation is found between the presence of Al at the bottom interface and a flatband voltage increase. Based on these findings, we propose to use the position of the Al 2O 3 for fine-tuning the threshold voltage.

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DO - 10.1063/1.3684939

M3 - مقالة

SN - 0003-6951

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JO - Applied Physics Letters

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M1 - 062907

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Investigation of the band offsets caused by thin Al ₂O ₃ layers in HfO ₂ based Si metal oxide semiconductor devices

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