Intrinsic Anomalous Nernst Effect Amplified by Disorder in a Half-Metallic Semimetal

Linchao Ding, Jahyun Koo, Liangcai Xu, Xiaokang Li, Xiufang Lu, Lingxiao Zhao, Qi Wang, Qiangwei Yin, Hechang Lei, Binghai Yan, Zengwei Zhu, Kamran Behnia

Research output: Contribution to journalArticlepeer-review

Abstract

Intrinsic anomalous Nernst effect, like its Hall counterpart, is generated by Berry curvature of electrons in solids. Little is known about its response to disorder. In contrast, the link between the amplitude of the ordinary Nernst coefficient and the mean-free path is extensively documented. Here, by studying Co3Sn2S2, a topological half-metallic semimetal hosting sizable and recognizable ordinary and anomalous Nernst responses, we demonstrate an anticorrelation between the amplitudes of carrier mobility and the anomalous S-xy(A) (the ratio of transverse electric field to the longitudinal temperature gradient in the absence of magnetic field). We argue that the observation, paradoxically, establishes the intrinsic origin of the anomalous Nernst effect in this system. We conclude that various intrinsic off-diagonal coefficients are set by the way the Berry curvature is averaged on a grid involving the mean-free path, the Fermi wavelength, and the de Broglie thermal length.

Original languageEnglish
Article number041061
Number of pages9
JournalPhysical Review X
Volume9
Issue number4
DOIs
StatePublished - 24 Dec 2019

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