Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study

Avshalom Hava; Jin Qin; Joseph B. Bernstein; Yizhak Bot

doi:https://doi.org/10.1109/rams.2013.6517737

Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study

Avshalom Hava, Jin Qin, Joseph B. Bernstein, Yizhak Bot

Department of Electrical and Electronics Engineering

Ariel University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Microelectronics device reliability has been improving with every generation of technology whereas the density of the circuits continues to double approximately every 18 months. We studied field data gathered from a large fleet of mobile communications products that were deployed over a period of 8 years in order to examine the reliability trend in the field. We extrapolated the expected failure rate for a series of microprocessors and found a significant trend whereby the circuit failure rate increases approximately half the rate of the technology, going up by approximately √2 in that same 18 month period.

Original language	English
Title of host publication	59th Annual Reliability and Maintainability Symposium, RAMS 2013 - Proceedings and Tutorials
DOIs	https://doi.org/10.1109/rams.2013.6517737
State	Published - 2013
Event	59th Annual Reliability and Maintainability Symposium, RAMS 2013 - Orlando, FL, United States Duration: 28 Jan 2013 → 31 Jan 2013

Publication series

Name	Proceedings - Annual Reliability and Maintainability Symposium

Conference

Conference	59th Annual Reliability and Maintainability Symposium, RAMS 2013
Country/Territory	United States
City	Orlando, FL
Period	28/01/13 → 31/01/13

Keywords

Failure Rate
Physics-of-Failure
Simulation

All Science Journal Classification (ASJC) codes

Safety, Risk, Reliability and Quality
Computer Science Applications
General Mathematics

Access to Document

https://doi.org/10.1109/rams.2013.6517737

Cite this

Hava, A., Qin, J., Bernstein, J. B., & Bot, Y. (2013). Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study. In 59th Annual Reliability and Maintainability Symposium, RAMS 2013 - Proceedings and Tutorials Article 6517737 (Proceedings - Annual Reliability and Maintainability Symposium). https://doi.org/10.1109/rams.2013.6517737

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title = "Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study",

abstract = "Microelectronics device reliability has been improving with every generation of technology whereas the density of the circuits continues to double approximately every 18 months. We studied field data gathered from a large fleet of mobile communications products that were deployed over a period of 8 years in order to examine the reliability trend in the field. We extrapolated the expected failure rate for a series of microprocessors and found a significant trend whereby the circuit failure rate increases approximately half the rate of the technology, going up by approximately √2 in that same 18 month period.",

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booktitle = "59th Annual Reliability and Maintainability Symposium, RAMS 2013 - Proceedings and Tutorials",

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Hava, A, Qin, J, Bernstein, JB & Bot, Y 2013, Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study. in 59th Annual Reliability and Maintainability Symposium, RAMS 2013 - Proceedings and Tutorials., 6517737, Proceedings - Annual Reliability and Maintainability Symposium, 59th Annual Reliability and Maintainability Symposium, RAMS 2013, Orlando, FL, United States, 28/01/13. https://doi.org/10.1109/rams.2013.6517737

Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study. / Hava, Avshalom; Qin, Jin; Bernstein, Joseph B. et al.
59th Annual Reliability and Maintainability Symposium, RAMS 2013 - Proceedings and Tutorials. 2013. 6517737 (Proceedings - Annual Reliability and Maintainability Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - Microelectronics device reliability has been improving with every generation of technology whereas the density of the circuits continues to double approximately every 18 months. We studied field data gathered from a large fleet of mobile communications products that were deployed over a period of 8 years in order to examine the reliability trend in the field. We extrapolated the expected failure rate for a series of microprocessors and found a significant trend whereby the circuit failure rate increases approximately half the rate of the technology, going up by approximately √2 in that same 18 month period.

AB - Microelectronics device reliability has been improving with every generation of technology whereas the density of the circuits continues to double approximately every 18 months. We studied field data gathered from a large fleet of mobile communications products that were deployed over a period of 8 years in order to examine the reliability trend in the field. We extrapolated the expected failure rate for a series of microprocessors and found a significant trend whereby the circuit failure rate increases approximately half the rate of the technology, going up by approximately √2 in that same 18 month period.

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M3 - منشور من مؤتمر

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T3 - Proceedings - Annual Reliability and Maintainability Symposium

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Hava A, Qin J, Bernstein JB, Bot Y. Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study. In 59th Annual Reliability and Maintainability Symposium, RAMS 2013 - Proceedings and Tutorials. 2013. 6517737. (Proceedings - Annual Reliability and Maintainability Symposium). doi: https://doi.org/10.1109/rams.2013.6517737

Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study

Abstract

Publication series

Conference

Keywords

All Science Journal Classification (ASJC) codes

Access to Document

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