Abstract
In a memristor crossbar array, functioning as a memory array, a memristor is positioned on each row-column intersection, and its resistance, low or high, represents two logical states. The state of every memristor can be sensed by the current flowing through the memristor. In this paper, we study the sneak path problem in crossbar arrays, in which current can sneak through other cells, resulting in reading a wrong state of the memristor. Our main contributions are modeling the error channel induced by sneak paths, a new characterization of arrays free of sneak paths, and efficient methods to read the array cells while avoiding sneak paths. To each read method, we match a constraint on the array content that guarantees sneak-path free readout, determine the resulting capacity, and provide an efficient encoder that achieves the capacity.
Original language | English |
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Article number | 7523955 |
Pages (from-to) | 4801-4813 |
Number of pages | 13 |
Journal | IEEE Transactions on Information Theory |
Volume | 62 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2016 |
Keywords
- Codes for memories
- Z channel
- constraint codes
- crossbar arrays
- memristors
- resistive memories
- sneak paths
All Science Journal Classification (ASJC) codes
- Information Systems
- Computer Science Applications
- Library and Information Sciences