Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

Y. Huang; S. Aharon; A. Rolland; L. Pedesseau; O. Durand; L. Etgar; J. Even

doi:10.1051/epjpv/2017001

Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

Y. Huang
, S. Aharon
, A. Rolland
, L. Pedesseau
, O. Durand
, L. Etgar
, J. Even

Institute of Chemistry

The Hebrew University of Jerusalem

Research output: Contribution to journal › Article › peer-review

Abstract

The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.

Original language	English
Article number	85501
Journal	EPJ Photovoltaics
Volume	8
DOIs	https://doi.org/10.1051/epjpv/2017001
State	Published - 2017

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1051/epjpv/2017001

Cite this

@article{72c8e432a594478b8b5bfe7a6ad49c98,

title = "Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells",

abstract = "The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.",

author = "Y. Huang and S. Aharon and A. Rolland and L. Pedesseau and O. Durand and L. Etgar and J. Even",

note = "Publisher Copyright: {\textcopyright} Y. Huang et al.",

year = "2017",

doi = "10.1051/epjpv/2017001",

language = "English",

volume = "8",

journal = "EPJ Photovoltaics",

issn = "2105-0716",

publisher = "EDP Sciences",

}

TY - JOUR

T1 - Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

AU - Huang, Y.

AU - Aharon, S.

AU - Rolland, A.

AU - Pedesseau, L.

AU - Durand, O.

AU - Etgar, L.

AU - Even, J.

PY - 2017

Y1 - 2017

N2 - The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.

AB - The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.

UR - https://www.scopus.com/pages/publications/85028611404

U2 - 10.1051/epjpv/2017001

DO - 10.1051/epjpv/2017001

M3 - Article

SN - 2105-0716

VL - 8

JO - EPJ Photovoltaics

JF - EPJ Photovoltaics

M1 - 85501

ER -

Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

Abstract

UN SDGs

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this