Inelastic relaxation in Gd-doped ceria films: Micro-Raman spectroscopy

Olga Kraynis; Ellen Wachtel; Igor Lubomirsky; Tsachi Livneh

doi:https://doi.org/10.1016/j.scriptamat.2017.02.012

Inelastic relaxation in Gd-doped ceria films: Micro-Raman spectroscopy

Olga Kraynis, Ellen Wachtel, Igor Lubomirsky, Tsachi Livneh

Department of Molecular Chemistry and Materials Science Perlman

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

Abstract

Micro-Raman spectroscopy and X-ray diffraction were used to study time-dependent structural changes in sputtered Ce_1-xGd_xO_2-x/2 films. The F_2g peak position was measured at five well-defined film locations; X-ray diffraction assessed in-plane compressive strain and unit cell volume. For x = 0.05, at all locations monitored post-annealing, the F_2g frequency continued to increase during two weeks and for x = 0.10, at 4 of 5 locations during six weeks. This time-dependent behavior is attributed to relaxation of local elastic dipolar strain fields. Raman spectroscopy can properly evaluate strain in thin films of these materials only when mechanical properties, defect structure, temporal and thermal history are considered.

Original language	English
Pages (from-to)	123-126
Number of pages	4
Journal	Scripta Materialia
Volume	137
DOIs	https://doi.org/10.1016/j.scriptamat.2017.02.012
State	Published - Aug 2017

Keywords

Anelastic relaxation
Gd-doped ceria
Raman spectroscopy

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
General Materials Science

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https://doi.org/10.1016/j.scriptamat.2017.02.012

Cite this

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title = "Inelastic relaxation in Gd-doped ceria films: Micro-Raman spectroscopy",

abstract = "Micro-Raman spectroscopy and X-ray diffraction were used to study time-dependent structural changes in sputtered Ce1-xGdxO2-x/2 films. The F2g peak position was measured at five well-defined film locations; X-ray diffraction assessed in-plane compressive strain and unit cell volume. For x = 0.05, at all locations monitored post-annealing, the F2g frequency continued to increase during two weeks and for x = 0.10, at 4 of 5 locations during six weeks. This time-dependent behavior is attributed to relaxation of local elastic dipolar strain fields. Raman spectroscopy can properly evaluate strain in thin films of these materials only when mechanical properties, defect structure, temporal and thermal history are considered.",

keywords = "Anelastic relaxation, Gd-doped ceria, Raman spectroscopy",

author = "Olga Kraynis and Ellen Wachtel and Igor Lubomirsky and Tsachi Livneh",

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year = "2017",

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doi = "https://doi.org/10.1016/j.scriptamat.2017.02.012",

language = "الإنجليزيّة",

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T1 - Inelastic relaxation in Gd-doped ceria films

T2 - Micro-Raman spectroscopy

AU - Kraynis, Olga

AU - Wachtel, Ellen

AU - Lubomirsky, Igor

AU - Livneh, Tsachi

PY - 2017/8

Y1 - 2017/8

N2 - Micro-Raman spectroscopy and X-ray diffraction were used to study time-dependent structural changes in sputtered Ce1-xGdxO2-x/2 films. The F2g peak position was measured at five well-defined film locations; X-ray diffraction assessed in-plane compressive strain and unit cell volume. For x = 0.05, at all locations monitored post-annealing, the F2g frequency continued to increase during two weeks and for x = 0.10, at 4 of 5 locations during six weeks. This time-dependent behavior is attributed to relaxation of local elastic dipolar strain fields. Raman spectroscopy can properly evaluate strain in thin films of these materials only when mechanical properties, defect structure, temporal and thermal history are considered.

AB - Micro-Raman spectroscopy and X-ray diffraction were used to study time-dependent structural changes in sputtered Ce1-xGdxO2-x/2 films. The F2g peak position was measured at five well-defined film locations; X-ray diffraction assessed in-plane compressive strain and unit cell volume. For x = 0.05, at all locations monitored post-annealing, the F2g frequency continued to increase during two weeks and for x = 0.10, at 4 of 5 locations during six weeks. This time-dependent behavior is attributed to relaxation of local elastic dipolar strain fields. Raman spectroscopy can properly evaluate strain in thin films of these materials only when mechanical properties, defect structure, temporal and thermal history are considered.

KW - Anelastic relaxation

KW - Gd-doped ceria

KW - Raman spectroscopy

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U2 - https://doi.org/10.1016/j.scriptamat.2017.02.012

DO - https://doi.org/10.1016/j.scriptamat.2017.02.012

M3 - مقالة

SN - 1359-6462

VL - 137

SP - 123

EP - 126

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Inelastic relaxation in Gd-doped ceria films: Micro-Raman spectroscopy

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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