The search for ultrathin and robust ferroelectrics leads to few promising two-dimensional (2D) materials. In2Se3 has drawn special attention owing to the existence of intercoupled in-plane (IP) and out-of-plane (OOP) ferroelectricity in monolayer form, which makes it a potential candidate for emerging artificial intelligence, information processing and memory applications. In addition, the high optical absorption and phase-dependent visible to infrared bandgap become advantageous from optoelectronics point-of-view. This unique ferroelectric and optoelectronic coupling further leads to explore atomic-scale multifunctional devices. In this review, we summarized the progress of non-volatile memory (NVM) and photodetector devices, and their intercoupled applications using 2D In2Se3. We expect that this review will provide an insight towards the promising future of 2D ferroelectric-(opto)electronics and motivate researchers for further development towards industrial scale.
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