Abstract
In this work, we focused on studying the impact of different surface treatments for Cd1−xZnxTe (CZT) and Cd1−xMnxTe (CMT) samples with indium evaporated contacts, specifically: mechanical polishing (MP), mechano-chemical polishing (MCP) and mechanical polishing followed by the chemical etching (MP+Et). We examined 3 samples in each group of Cd0.85Zn0.15Te and 3 samples in each group of Cd0.93Mn0.07Te. Devices were consecutively characterized by current–voltage dependence (I–V). The measured characteristics revealed that for CMT both surface treatments, including chemical exposure to bromine ethylene glycol in MCP or bromine methanol in etching, resulted in linear I–V characteristic consistent with the bulk resistance. At the same time, chemical treatments of CZT samples dramatically increased their current densities (up to several μA/cm2).
Original language | English |
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Pages (from-to) | 46-47 |
Number of pages | 2 |
Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 936 |
DOIs | |
State | Published - 21 Aug 2019 |
Keywords
- CdMnTe
- CdZnTe
- Surface
- X-ray detectors
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Instrumentation