Impact of electron injection on carrier transport and recombination in unintentionally doped GaN

Sushrut Modak; Leonid Chernyak; Minghan Xian; Fan Ren; Stephen J. Pearton; Sergey Khodorov; Igor Lubomirsky; Arie Ruzin; Zinovi Dashevsky

doi:10.1063/5.0017742

Impact of electron injection on carrier transport and recombination in unintentionally doped GaN

Sushrut Modak, Leonid Chernyak, Minghan Xian, Fan Ren, Stephen J. Pearton, Sergey Khodorov, Igor Lubomirsky, Arie Ruzin, Zinovi Dashevsky

Tel Aviv University, Weizmann Institute of Science, Ben-Gurion University of the Negev

Research output: Contribution to journal › Article › peer-review

Abstract

The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.

Original language	English
Article number	085702
Number of pages	6
Journal	Journal of Applied Physics
Volume	128
Issue number	8
Early online date	24 Aug 2020
DOIs	https://doi.org/10.1063/5.0017742
State	Published - 28 Aug 2020

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/5.0017742

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title = "Impact of electron injection on carrier transport and recombination in unintentionally doped GaN",

abstract = "The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.",

author = "Sushrut Modak and Leonid Chernyak and Minghan Xian and Fan Ren and Pearton, \{Stephen J.\} and Sergey Khodorov and Igor Lubomirsky and Arie Ruzin and Zinovi Dashevsky",

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doi = "10.1063/5.0017742",

language = "الإنجليزيّة",

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T1 - Impact of electron injection on carrier transport and recombination in unintentionally doped GaN

AU - Modak, Sushrut

AU - Chernyak, Leonid

AU - Xian, Minghan

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Khodorov, Sergey

AU - Lubomirsky, Igor

AU - Ruzin, Arie

AU - Dashevsky, Zinovi

PY - 2020/8/28

Y1 - 2020/8/28

N2 - The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.

AB - The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.

UR - http://www.scopus.com/inward/record.url?scp=85090087328&partnerID=8YFLogxK

U2 - 10.1063/5.0017742

DO - 10.1063/5.0017742

M3 - مقالة

SN - 0021-8979

VL - 128

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 085702

ER -

Impact of electron injection on carrier transport and recombination in unintentionally doped GaN

Abstract

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