Impact of body biasing on the retention time of gain-cell memories

Pascal Meinerzhagen; Adam Teman; Alexander Fish; Andreas Burg

doi:10.1049/joe.2013.0057

Impact of body biasing on the retention time of gain-cell memories

Pascal Meinerzhagen
, Adam Teman
, Alexander Fish
, Andreas Burg

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

Abstract

Gain-cell-based embedded dynamic random-access memory (DRAMs) are a potential high-density alternative to mainstream static random-access memory (SRAM). However, the limited data retention time of ...

Original language	English
Pages (from-to)	19-22
Number of pages	4
Journal	Journal of Engineering
Volume	2013
Issue number	8
DOIs	https://doi.org/10.1049/joe.2013.0057
State	Published - 1 Aug 2013

Keywords

CMOS integrated circuits
DRAM chips
SRAM
body biasing impact
embedded systems
gain cell array
gain cell-based embedded DRAMs
limited data retention time
memory block
periodic refresh cycles
silicon measurements
size 0.18 mum
storage capacity 2 Kbit
test chip

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10.1049/joe.2013.0057License: CC BY

Cite this

@article{b2f2e839834b4ab7a8d22e3f3dd8968e,

title = "Impact of body biasing on the retention time of gain-cell memories",

abstract = "Gain-cell-based embedded dynamic random-access memory (DRAMs) are a potential high-density alternative to mainstream static random-access memory (SRAM). However, the limited data retention time of ...",

keywords = "CMOS integrated circuits, DRAM chips, SRAM, body biasing impact, embedded systems, gain cell array, gain cell-based embedded DRAMs, limited data retention time, memory block, periodic refresh cycles, silicon measurements, size 0.18 mum, storage capacity 2 Kbit, test chip",

author = "Pascal Meinerzhagen and Adam Teman and Alexander Fish and Andreas Burg",

year = "2013",

month = aug,

day = "1",

doi = "10.1049/joe.2013.0057",

language = "الإنجليزيّة",

volume = "2013",

pages = "19--22",

journal = "Journal of Engineering",

issn = "2051-3305",

publisher = "John Wiley and Sons Ltd",

number = "8",

}

TY - JOUR

T1 - Impact of body biasing on the retention time of gain-cell memories

AU - Meinerzhagen, Pascal

AU - Teman, Adam

AU - Fish, Alexander

AU - Burg, Andreas

PY - 2013/8/1

Y1 - 2013/8/1

N2 - Gain-cell-based embedded dynamic random-access memory (DRAMs) are a potential high-density alternative to mainstream static random-access memory (SRAM). However, the limited data retention time of ...

AB - Gain-cell-based embedded dynamic random-access memory (DRAMs) are a potential high-density alternative to mainstream static random-access memory (SRAM). However, the limited data retention time of ...

KW - CMOS integrated circuits

KW - DRAM chips

KW - SRAM

KW - body biasing impact

KW - embedded systems

KW - gain cell array

KW - gain cell-based embedded DRAMs

KW - limited data retention time

KW - memory block

KW - periodic refresh cycles

KW - silicon measurements

KW - size 0.18 mum

KW - storage capacity 2 Kbit

KW - test chip

UR - https://www.mendeley.com/catalogue/f2da9fb3-d7a1-3ea9-bba5-fd3144b474cd/

U2 - 10.1049/joe.2013.0057

DO - 10.1049/joe.2013.0057

M3 - مقالة

SN - 2051-3305

VL - 2013

SP - 19

EP - 22

JO - Journal of Engineering

JF - Journal of Engineering

IS - 8

ER -

Impact of body biasing on the retention time of gain-cell memories

Abstract

Keywords

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