Hydrogen plasma microlithography of graphene supported on a Si/SiO 2 substrate

Baran Eren; Thilo Glatzel; Marcin Kisiel; Wangyang Fu; Rémy Pawlak; Urs Gysin; Cornelia Nef; Laurent Marot; Michel Calame; Christian Schönenberger; Ernst Meyer

doi:10.1063/1.4793197

Hydrogen plasma microlithography of graphene supported on a Si/SiO ₂ substrate

Baran Eren, Thilo Glatzel, Marcin Kisiel, Wangyang Fu, Rémy Pawlak, Urs Gysin, Cornelia Nef, Laurent Marot, Michel Calame, Christian Schönenberger, Ernst Meyer

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, a silicon stencil mask with a periodic pattern is used for hydrogen plasma microlithography of single layer graphene supported on a Si/SiO₂ substrate. Obtained patterns are imaged with Raman microscopy and Kelvin probe force microscopy, thanks to the changes in the vibrational modes and the contact potential difference (CPD) of graphene after treatment. A decrease of 60 meV in CPD as well as a significant change of the D/G ratio in the Raman spectra can be associated with a local hydrogenation of graphene, while the topography remains invariant to the plasma exposure.

Original language	English
Article number	071602
Journal	Applied Physics Letters
Volume	102
Issue number	7
DOIs	https://doi.org/10.1063/1.4793197
State	Published - 18 Feb 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4793197

Cite this

@article{a0b91f74b07f442d946508e2cd93bf69,

title = "Hydrogen plasma microlithography of graphene supported on a Si/SiO 2 substrate",

abstract = "In this work, a silicon stencil mask with a periodic pattern is used for hydrogen plasma microlithography of single layer graphene supported on a Si/SiO2 substrate. Obtained patterns are imaged with Raman microscopy and Kelvin probe force microscopy, thanks to the changes in the vibrational modes and the contact potential difference (CPD) of graphene after treatment. A decrease of 60 meV in CPD as well as a significant change of the D/G ratio in the Raman spectra can be associated with a local hydrogenation of graphene, while the topography remains invariant to the plasma exposure.",

author = "Baran Eren and Thilo Glatzel and Marcin Kisiel and Wangyang Fu and R{\'e}my Pawlak and Urs Gysin and Cornelia Nef and Laurent Marot and Michel Calame and Christian Sch{\"o}nenberger and Ernst Meyer",

note = "Swiss Federal Office of Energy; Federal Office for Education and Science; Swiss National Foundation (SNF); National Centre of Competence in Research on Nanoscale Science (NCCR Nano)",

year = "2013",

month = feb,

day = "18",

doi = "10.1063/1.4793197",

language = "الإنجليزيّة",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Hydrogen plasma microlithography of graphene supported on a Si/SiO 2 substrate

AU - Eren, Baran

AU - Glatzel, Thilo

AU - Kisiel, Marcin

AU - Fu, Wangyang

AU - Pawlak, Rémy

AU - Gysin, Urs

AU - Nef, Cornelia

AU - Marot, Laurent

AU - Calame, Michel

AU - Schönenberger, Christian

AU - Meyer, Ernst

N1 - Swiss Federal Office of Energy; Federal Office for Education and Science; Swiss National Foundation (SNF); National Centre of Competence in Research on Nanoscale Science (NCCR Nano)

PY - 2013/2/18

Y1 - 2013/2/18

N2 - In this work, a silicon stencil mask with a periodic pattern is used for hydrogen plasma microlithography of single layer graphene supported on a Si/SiO2 substrate. Obtained patterns are imaged with Raman microscopy and Kelvin probe force microscopy, thanks to the changes in the vibrational modes and the contact potential difference (CPD) of graphene after treatment. A decrease of 60 meV in CPD as well as a significant change of the D/G ratio in the Raman spectra can be associated with a local hydrogenation of graphene, while the topography remains invariant to the plasma exposure.

AB - In this work, a silicon stencil mask with a periodic pattern is used for hydrogen plasma microlithography of single layer graphene supported on a Si/SiO2 substrate. Obtained patterns are imaged with Raman microscopy and Kelvin probe force microscopy, thanks to the changes in the vibrational modes and the contact potential difference (CPD) of graphene after treatment. A decrease of 60 meV in CPD as well as a significant change of the D/G ratio in the Raman spectra can be associated with a local hydrogenation of graphene, while the topography remains invariant to the plasma exposure.

UR - http://www.scopus.com/inward/record.url?scp=84874549040&partnerID=8YFLogxK

U2 - 10.1063/1.4793197

DO - 10.1063/1.4793197

M3 - مقالة

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071602