Hydrogen Induced Dipole Layer in Pd-SiO2Based Gas Sensors

Idan Shem Tov; Anwesha Mukherjee; Joseph Hayon; Laura Hargreaves; Alexander Shluger; Yossi Rosenwaks

doi:https://doi.org/10.1109/SAS54819.2022.9881358

Hydrogen Induced Dipole Layer in Pd-SiO₂Based Gas Sensors

Idan Shem Tov, Anwesha Mukherjee, Joseph Hayon, Laura Hargreaves, Alexander Shluger, Yossi Rosenwaks

School of Electrical Engineering

Tel Aviv University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A palladium (Pd) functionalized electrostatically formed nanowire (EFN) sensor, a silicon-on-insulator (SOI) based multi-gate transistor, has proven to be an ultra-sensitive platform for hydrogen (H2) sensing. This EFN includes a Pd- SiO2-Silicon, a metal-oxide-semiconductor (MOS) structure which is studied here in detail. We compare the EFN threshold voltage shift (VTH) due to H2 adsorption, to the calculated VTH due to dipoles placed at the Pd/SiO2 interface of the EFN device. We show that the potential drop at the Pd/SiO2 interface is responsible for the ultra-sensitive hydrogen sensing of the EFN.

Original language	English
Title of host publication	2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665409810
DOIs	https://doi.org/10.1109/SAS54819.2022.9881358
State	Published - 2022
Event	17th IEEE Sensors Applications Symposium, SAS 2022 - Sundsvall, Sweden Duration: 1 Aug 2022 → 3 Aug 2022

Publication series

Name	2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings

Conference

Conference	17th IEEE Sensors Applications Symposium, SAS 2022
Country/Territory	Sweden
City	Sundsvall
Period	1/08/22 → 3/08/22

Keywords

Band diagram
EFN
Hydrogen
Kelvin-probe
MOS
Palladium
TCAD
dipole

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Electrical and Electronic Engineering
Instrumentation

Access to Document

https://doi.org/10.1109/SAS54819.2022.9881358

Cite this

Tov, I. S., Mukherjee, A., Hayon, J., Hargreaves, L., Shluger, A., & Rosenwaks, Y. (2022). Hydrogen Induced Dipole Layer in Pd-SiO₂Based Gas Sensors. In 2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings (2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SAS54819.2022.9881358

@inproceedings{0c863b57ece14ff6b1fb627f67a51c18,

title = "Hydrogen Induced Dipole Layer in Pd-SiO2Based Gas Sensors",

abstract = "A palladium (Pd) functionalized electrostatically formed nanowire (EFN) sensor, a silicon-on-insulator (SOI) based multi-gate transistor, has proven to be an ultra-sensitive platform for hydrogen (H2) sensing. This EFN includes a Pd- SiO2-Silicon, a metal-oxide-semiconductor (MOS) structure which is studied here in detail. We compare the EFN threshold voltage shift (VTH) due to H2 adsorption, to the calculated VTH due to dipoles placed at the Pd/SiO2 interface of the EFN device. We show that the potential drop at the Pd/SiO2 interface is responsible for the ultra-sensitive hydrogen sensing of the EFN.",

keywords = "Band diagram, EFN, Hydrogen, Kelvin-probe, MOS, Palladium, TCAD, dipole",

author = "Tov, {Idan Shem} and Anwesha Mukherjee and Joseph Hayon and Laura Hargreaves and Alexander Shluger and Yossi Rosenwaks",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 17th IEEE Sensors Applications Symposium, SAS 2022 ; Conference date: 01-08-2022 Through 03-08-2022",

year = "2022",

doi = "https://doi.org/10.1109/SAS54819.2022.9881358",

language = "الإنجليزيّة",

series = "2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings",

address = "الولايات المتّحدة",

}

Tov, IS, Mukherjee, A, Hayon, J, Hargreaves, L, Shluger, A & Rosenwaks, Y 2022, Hydrogen Induced Dipole Layer in Pd-SiO₂Based Gas Sensors. in 2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings. 2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 17th IEEE Sensors Applications Symposium, SAS 2022, Sundsvall, Sweden, 1/08/22. https://doi.org/10.1109/SAS54819.2022.9881358

Hydrogen Induced Dipole Layer in Pd-SiO₂Based Gas Sensors. / Tov, Idan Shem; Mukherjee, Anwesha; Hayon, Joseph et al.
2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Hydrogen Induced Dipole Layer in Pd-SiO2Based Gas Sensors

AU - Tov, Idan Shem

AU - Mukherjee, Anwesha

AU - Hayon, Joseph

AU - Hargreaves, Laura

AU - Shluger, Alexander

AU - Rosenwaks, Yossi

PY - 2022

Y1 - 2022

N2 - A palladium (Pd) functionalized electrostatically formed nanowire (EFN) sensor, a silicon-on-insulator (SOI) based multi-gate transistor, has proven to be an ultra-sensitive platform for hydrogen (H2) sensing. This EFN includes a Pd- SiO2-Silicon, a metal-oxide-semiconductor (MOS) structure which is studied here in detail. We compare the EFN threshold voltage shift (VTH) due to H2 adsorption, to the calculated VTH due to dipoles placed at the Pd/SiO2 interface of the EFN device. We show that the potential drop at the Pd/SiO2 interface is responsible for the ultra-sensitive hydrogen sensing of the EFN.

AB - A palladium (Pd) functionalized electrostatically formed nanowire (EFN) sensor, a silicon-on-insulator (SOI) based multi-gate transistor, has proven to be an ultra-sensitive platform for hydrogen (H2) sensing. This EFN includes a Pd- SiO2-Silicon, a metal-oxide-semiconductor (MOS) structure which is studied here in detail. We compare the EFN threshold voltage shift (VTH) due to H2 adsorption, to the calculated VTH due to dipoles placed at the Pd/SiO2 interface of the EFN device. We show that the potential drop at the Pd/SiO2 interface is responsible for the ultra-sensitive hydrogen sensing of the EFN.

KW - Band diagram

KW - EFN

KW - Hydrogen

KW - Kelvin-probe

KW - MOS

KW - Palladium

KW - TCAD

KW - dipole

UR - http://www.scopus.com/inward/record.url?scp=85139109284&partnerID=8YFLogxK

U2 - https://doi.org/10.1109/SAS54819.2022.9881358

DO - https://doi.org/10.1109/SAS54819.2022.9881358

M3 - منشور من مؤتمر

T3 - 2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings

BT - 2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 17th IEEE Sensors Applications Symposium, SAS 2022

Y2 - 1 August 2022 through 3 August 2022

ER -

Tov IS, Mukherjee A, Hayon J, Hargreaves L, Shluger A, Rosenwaks Y. Hydrogen Induced Dipole Layer in Pd-SiO₂Based Gas Sensors. In 2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 IEEE Sensors Applications Symposium, SAS 2022 - Proceedings). doi: https://doi.org/10.1109/SAS54819.2022.9881358