Hybrid high-temperature-superconductor-semiconductor tunnel diode

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

doi:https://doi.org/10.1103/PhysRevX.2.041019

Hybrid high-temperature-superconductor-semiconductor tunnel diode

Alex Hayat, Parisa Zareapour, Shu Yang F. Zhao, Achint Jain, Igor G. Savelyev, Marina Blumin, Zhijun Xu, Alina Yang, G. D. Gu, Harry E. Ruda, Shuang Jia, R. J. Cava, Aephraim M. Steinberg, Kenneth S. Burch

Research output: Contribution to journal › Article › peer-review

Abstract

We report the demonstration of hybrid high-T_c-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_c-superconductor-semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi₂Sr₂CaCu₂O_8+δ combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor-normal-material junction. Additional junctions are demonstrated using Bi₂Sr₂CaCu₂O_8+δ combined with graphite or Bi₂Te₃. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

Original language	English
Article number	041019
Journal	Physical Review X
Volume	2
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevX.2.041019
State	Published - 2012
Externally published	Yes

Keywords

Electronics
Semiconductor physics
Superconductivity

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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https://doi.org/10.1103/PhysRevX.2.041019

Cite this

@article{a05f1572ade4478cb3b3c5971c435115,

title = "Hybrid high-temperature-superconductor-semiconductor tunnel diode",

abstract = "We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-Tc-superconductor-semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+δ combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor-normal-material junction. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+δ combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.",

keywords = "Electronics, Semiconductor physics, Superconductivity",

author = "Alex Hayat and Parisa Zareapour and Zhao, {Shu Yang F.} and Achint Jain and Savelyev, {Igor G.} and Marina Blumin and Zhijun Xu and Alina Yang and Gu, {G. D.} and Ruda, {Harry E.} and Shuang Jia and Cava, {R. J.} and Steinberg, {Aephraim M.} and Burch, {Kenneth S.}",

year = "2012",

doi = "https://doi.org/10.1103/PhysRevX.2.041019",

language = "الإنجليزيّة",

volume = "2",

journal = "Physical Review X",

issn = "2160-3308",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - Hybrid high-temperature-superconductor-semiconductor tunnel diode

AU - Hayat, Alex

AU - Zareapour, Parisa

AU - Zhao, Shu Yang F.

AU - Jain, Achint

AU - Savelyev, Igor G.

AU - Blumin, Marina

AU - Xu, Zhijun

AU - Yang, Alina

AU - Gu, G. D.

AU - Ruda, Harry E.

AU - Jia, Shuang

AU - Cava, R. J.

AU - Steinberg, Aephraim M.

AU - Burch, Kenneth S.

PY - 2012

Y1 - 2012

N2 - We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-Tc-superconductor-semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+δ combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor-normal-material junction. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+δ combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

AB - We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-Tc-superconductor-semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+δ combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor-normal-material junction. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+δ combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

KW - Electronics

KW - Semiconductor physics

KW - Superconductivity

UR - http://www.scopus.com/inward/record.url?scp=84879903489&partnerID=8YFLogxK

U2 - https://doi.org/10.1103/PhysRevX.2.041019

DO - https://doi.org/10.1103/PhysRevX.2.041019

M3 - مقالة

SN - 2160-3308

VL - 2

JO - Physical Review X

JF - Physical Review X

IS - 4

M1 - 041019

ER -

Hybrid high-temperature-superconductor-semiconductor tunnel diode

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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